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    Infineon Technologies AG IRF5803TRPBF

    MOSFET P-CH 40V 3.4A MICRO6
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    DigiKey IRF5803TRPBF Digi-Reel 33,638 1
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    IRF5803TRPBF Cut Tape 33,638 1
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    IRF5803TRPBF Reel 27,000 3,000
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    TME IRF5803TRPBF 2,850 1
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    EBV Elektronik IRF5803TRPBF 486,000 13 Weeks 3,000
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    Infineon Technologies AG IRF5801TRPBF

    MOSFET N-CH 200V 600MA MICRO6
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    DigiKey IRF5801TRPBF Cut Tape 7,746 1
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    IRF5801TRPBF Digi-Reel 7,746 1
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    IRF5801TRPBF Reel 6,000 3,000
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    Avnet Americas IRF5801TRPBF Reel 10 Weeks 3,000
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    Mouser Electronics IRF5801TRPBF 29,250
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    Infineon Technologies AG IRF5802TRPBF

    MOSFET N-CH 150V 900MA MICRO6
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    DigiKey IRF5802TRPBF Digi-Reel 7,256 1
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    Rochester Electronics IRF5802TRPBF 18,000 1
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    TME IRF5802TRPBF 1,945 1
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    Infineon Technologies AG IRF5802

    MOSFET N-CH 150V 900MA MICRO6
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    DigiKey IRF5802 Tube 100
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    Infineon Technologies AG IRF5803D2PBF

    MOSFET P-CH 40V 3.4A 8SO
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    DigiKey IRF5803D2PBF Tube 1,330
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    IRF580 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF5800 International Rectifier HEXFET Power Mosfet Original PDF
    IRF5800 International Rectifier HEXFET Power MOSFET Original PDF
    IRF5800PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRF5800TR International Rectifier -30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5800TRPBF International Rectifier Original PDF
    IRF5801 International Rectifier HEXFET POWER SMPS MOSFET Original PDF
    IRF5801TR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5801TRPBF International Rectifier Original PDF
    IRF5802 International Rectifier HEXFET Power MOSFET Original PDF
    IRF5802PBF International Rectifier SMPS MOSFET Original PDF
    IRF5802TR International Rectifier 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5802TRPBF International Rectifier 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5802TRPBF International Rectifier Original PDF
    IRF5803 International Rectifier HEXFET Power MOSFET Original PDF
    IRF5803D2 International Rectifier FETKY MOSFET & Schottky Diode Original PDF
    IRF5803D2PBF International Rectifier Original PDF
    IRF5803D2TR International Rectifier -40V FETKY - MOSFET and Schottky Diode in a SO-8 package Original PDF
    IRF5803D2TRPBF International Rectifier Original PDF
    IRF5803TR International Rectifier -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    IRF5803TRPBF International Rectifier Original PDF

    IRF580 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF 511 MOSfet

    Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
    Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier


    Original
    IRF5805PbF OT-23. IRF 511 MOSfet IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6 PDF

    IRF5800

    Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
    Text: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


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    PD-94015 IRF5803 simila5805 IRF5806 IRF5800 IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6 PDF

    IRF5820

    Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
    Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


    Original
    3997A IRF5806 OT-23. space252-7105 IRF5820 IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D PDF

    IRF5800

    Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
    Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    IRF5802 AN1001) IRF5800 IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6 PDF

    IRf 334

    Abstract: No abstract text available
    Text: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from


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    IRF5804PbF OT-23. IRf 334 PDF

    mosfet tsop-6 23

    Abstract: No abstract text available
    Text: PD - 95476B IRF5806PbF l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description


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    95476B IRF5806PbF OT-23. mosfet tsop-6 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4


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    5160A IRF5803D2PbF EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94029A IRF5805 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.0A Description These P-channel MOSFETs from International Rectifier


    Original
    -94029A IRF5805 OT-23. PDF

    IRF5802

    Abstract: No abstract text available
    Text: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    IRF5802 AN1001) IRF5802 PDF

    IRF 535

    Abstract: IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17
    Text: IRF5800PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


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    IRF5800PbF IRF5802 IRF 535 IRF 100A IRF 2004 mosfet 23 Tsop-6 irf 30A IRF5800 IRF5850 SI3443DV TSOP6 Marking Code 17 PDF

    AN1001

    Abstract: Design 24 v 3 A SMPS
    Text: PD- 95475B IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    95475B IRF5802PbF AN1001) AN1001 Design 24 v 3 A SMPS PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95503B IRF5804PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


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    95503B IRF5804PbF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier


    Original
    3997A IRF5806 OT-23. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94044A IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-94044A IRF5801 AN1001) IRF5801TRPBF 18-Sep-2009 PDF

    IRF Power MOSFET code marking

    Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
    Text: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier


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    5476A IRF5806PbF OT-23. IRF Power MOSFET code marking IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852 PDF

    IRF5803D2

    Abstract: MS-012AA
    Text: PD- 94016 IRF5803D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -40V


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    IRF5803D2 IRF5803D2 MS-012AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95262B IRF5803PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing


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    PD-95262B IRF5803PbF PDF

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


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    IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806 PDF

    IRF5800PBF

    Abstract: No abstract text available
    Text: PD - 96029A IRF5800PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free A D D 1 6 D 2 5 D G 3 4 S Description VDSS = -30V RDS on = 0.085Ω Top View


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    6029A IRF5800PbF OT-23. IRF5800PBF PDF

    st 95160

    Abstract: No abstract text available
    Text: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S


    Original
    IRF5803D2PbF EIA-481 EIA-541. st 95160 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95475B IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original
    95475B IRF5802PbF AN1001) PDF

    0.5-4A

    Abstract: AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
    Text: PD- 95475A IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    5475A IRF5802PbF AN1001) 0.5-4A AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV PDF

    TSOP-6 .54

    Abstract: AN1001 IRF5801
    Text: PD-94044 IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    PD-94044 IRF5801 AN1001) 10sec. TSOP-6 .54 AN1001 IRF5801 PDF

    IRF Power MOSFET code marking

    Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
    Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier


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    IRF5800PbF OT-23. IRF Power MOSFET code marking IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94 PDF