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    Infineon Technologies AG IRF7205TRPBF

    MOSFET P-CH 30V 4.6A 8SO
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    Infineon Technologies AG IRF7240TRPBF

    MOSFET P-CH 40V 10.5A 8SO
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    DigiKey IRF7240TRPBF Cut Tape 10,188 1
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    IRF7240TRPBF Reel 8,000 4,000
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    Mouser Electronics IRF7240TRPBF 13,015
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    Infineon Technologies AG IRF7241TRPBF

    MOSFET P-CH 40V 6.2A 8SO
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    DigiKey IRF7241TRPBF Digi-Reel 9,702 1
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    IRF7241TRPBF 4,220 40
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    UMW IRF7240TR

    MOSFET P-CH 40V 10.5A 8SOIC
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    DigiKey IRF7240TR Digi-Reel 3,000 1
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    UMW IRF7241TR

    MOSFET P-CH 40V 6.2A 8SOIC
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    DigiKey IRF7241TR Digi-Reel 3,000 1
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    IRF72 Datasheets (216)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF720 Fairchild Semiconductor 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Original PDF
    IRF720 International Rectifier 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF720 Intersil 3.3A, 400V, 1.800 ?, N-Channel Power MOSFET Original PDF
    IRF720 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF720 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 3.3A TO-220AB Original PDF
    IRF720 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 350-400 V Scan PDF
    IRF720 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF720 FCI POWER MOSFETs Scan PDF
    IRF720 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF720 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF720 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. Scan PDF
    IRF720 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF720 International Rectifier TRANSISTORS N-CHANNEL Scan PDF
    IRF720 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF720 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF720 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 3.3A, Pkg Style TO-220AB Scan PDF
    IRF720 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 400V, 3.3A, Pkg Style TO-220AB Scan PDF
    IRF720 Motorola Switchmode Datasheet Scan PDF
    IRF720 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF720 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    IRF72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode 46A

    Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
    Text: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25


    Original
    PDF KRF7205 IRF7205) smd diode 46A equivalent smd mosfet IRF7205 IC MOSFET QG ld smd transistor smd mosfet

    IRF7205

    Abstract: 1104B MS-012AA
    Text: PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V


    Original
    PDF 1104B IRF7205 IRF7205 1104B MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC)


    Original
    PDF IRF720, SiHF720 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF7207

    Abstract: No abstract text available
    Text: PD - 91879A IRF7207 HEXFET Power MOSFET l l l l l l Generation 5 Technology P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS on = 0.06Ω T op V ie w Description


    Original
    PDF 1879A IRF7207 The252-7105 IRF7207

    IRF7210

    Abstract: No abstract text available
    Text: PD- 91844A IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.007Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier


    Original
    PDF 1844A IRF7210 IRF7210

    IRF720B

    Abstract: MOSFET 400V TO-220
    Text: IRF720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    PDF IRF720B IRF720B MOSFET 400V TO-220

    IRF720S

    Abstract: SiHF720S SiHF720S-E3
    Text: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the


    Original
    PDF IRF720S, SiHF720S O-263) 18-Jul-08 IRF720S SiHF720S-E3

    AN609

    Abstract: IRF720S SiHF720S
    Text: IRF720S_RC, SiHF720S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF720S SiHF720S AN609, 09-Mar-10 AN609

    IRF720

    Abstract: TA17404 TB334
    Text: IRF720 Data Sheet January 2002 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original
    PDF IRF720 TA17404. IRF720 TA17404 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 11 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF720, SiHF720 O-220 O-220 12-Mar-07

    IRF7220

    Abstract: No abstract text available
    Text: PD- 91850C IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier


    Original
    PDF 91850C IRF7220 IRF7220

    Untitled

    Abstract: No abstract text available
    Text: IRF720, SiHF720 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling 11 • Simple drive requirements


    Original
    PDF IRF720, SiHF720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 95294 IRF7241PbF HEXFET Power MOSFET ● VDSS RDS on max (mW) ID ● -40V 41@VGS = -10V 70@VGS = -4.5V -6.2A -5.0A Trench Technology Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free New trench HEXFET® Power MOSFETs from


    Original
    PDF IRF7241PbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD- 91844B IRF7210 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -12V RDS on = 0.007Ω Top View Description These P-Channel MOSFETs from International Rectifier


    Original
    PDF 91844B IRF7210 EIA-481 EIA-541.

    IRF7201PBF

    Abstract: No abstract text available
    Text: PD- 95022 IRF7201PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Description HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D


    Original
    PDF IRF7201PbF EIA-481 EIA-541. IRF7201PBF

    Untitled

    Abstract: No abstract text available
    Text: IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF720S, SiHF720S 2002/95/EC O-263) 11-Mar-11

    IRF720

    Abstract: TA17404 TB334
    Text: IRF720 Data Sheet July 1999 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original
    PDF IRF720 TA17404. IRF720 TA17404 TB334

    IRF7240

    Abstract: MS-012AA 30V 10.5A p-channel MOSFET 65110A
    Text: PD- 93916 IRF7240 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon


    Original
    PDF IRF7240 IRF7240 MS-012AA 30V 10.5A p-channel MOSFET 65110A

    Untitled

    Abstract: No abstract text available
    Text: IRF720A Advanced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan
    PDF IRF720A

    IRF722

    Abstract: IRF723
    Text: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan
    PDF 100ms RDS10N| IRF722 IRF723

    Untitled

    Abstract: No abstract text available
    Text: International I1*”*!Rectifier PD 9.1103A IRF7204 preuminary HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching


    OCR Scan
    PDF IRF7204 variet7204 150KQ 4A5545E Q02bS3b

    Untitled

    Abstract: No abstract text available
    Text: IRF720 Semiconductor July 1999 Data Sheet 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan
    PDF IRF720 1-800i2 RF720

    IRF722

    Abstract: IRF720 IRF7221
    Text: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan
    PDF IRF720, IRF721, IRF722, IRF723 TA17404. RF723 RF720, RF722, RF723 IRF722 IRF720 IRF7221

    IRF7205

    Abstract: No abstract text available
    Text: PD - 9.1104B International IGR Rectifier IRF7205 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape and Reel • Dynamic dv/dt Rating • Fast Switching VDSS = -30V


    OCR Scan
    PDF 1104B IRF7205 IRF7205