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    Others IRF7307QPBF

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    International Rectifier IRF7307QPBF

    HEXFET Power MOSFET
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    Win Source Electronics IRF7307QPBF 4,100
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    IRF7307QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7307QPBF International Rectifier HEXFET Power MOSFET Original PDF

    IRF7307QPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F7101

    Abstract: IRF7101
    Text: PD - 96106A IRF7307QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original     		PDF 6106A IRF7307QPbF ava61 EIA-481 EIA-541. F7101 IRF7101

    IRF P CHANNEL MOSFET

    Abstract: MOSFET 150 N IRF N-P Channel mosfet
    Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7307QPbF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF N-P Channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRF7307QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to


    Original     		PDF IRF7307QPbF anD-020D

    Untitled

    Abstract: No abstract text available
    Text: IRF7307QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter V (BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage


    Original     		PDF IRF7307QPbF EIA-481 EIA-541.

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor