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    IRF740 Search Results

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    IRF740 Price and Stock

    Vishay Siliconix IRF740STRLPBF

    MOSFET N-CH 400V 10A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF740STRLPBF Reel 8,800 800
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    • 1000 $1.13038
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    New Advantage Corporation IRF740STRLPBF 3,200 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.36
    • 10000 $1.27
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    Vishay Siliconix IRF740PBF-BE3

    MOSFET N-CH 400V 10A TO220AB
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    DigiKey IRF740PBF-BE3 Tube 3,675 1
    • 1 $1.82
    • 10 $1.82
    • 100 $1.82
    • 1000 $0.82412
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    New Advantage Corporation IRF740PBF-BE3 2,000 1
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    • 1000 $0.9929
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    Infineon Technologies AG IRF7403TRPBF

    MOSFET N-CH 30V 8.5A 8SO
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    DigiKey IRF7403TRPBF Digi-Reel 3,336 1
    • 1 $1.65
    • 10 $1.047
    • 100 $1.65
    • 1000 $0.50319
    • 10000 $0.46293
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    IRF7403TRPBF Cut Tape 3,336 1
    • 1 $1.65
    • 10 $1.047
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    • 1000 $0.50319
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    Arrow Electronics IRF7403TRPBF 301 10 Weeks 1
    • 1 $0.5886
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    • 100 $0.4417
    • 1000 $0.3804
    • 10000 $0.3359
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    RS IRF7403TRPBF Bulk 20
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    Bristol Electronics IRF7403TRPBF 1,000
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    IRF7403TRPBF 576
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    Rochester Electronics IRF7403TRPBF 6,815 1
    • 1 $0.4478
    • 10 $0.4478
    • 100 $0.4209
    • 1000 $0.3806
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    Win Source Electronics IRF7403TRPBF 5,533
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    • 100 $0.5382
    • 1000 $0.3588
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    Vishay Siliconix IRF740PBF

    MOSFET N-CH 400V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF740PBF Tube 2,761 1
    • 1 $2.78
    • 10 $2.78
    • 100 $2.78
    • 1000 $0.91832
    • 10000 $0.82412
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    RS IRF740PBF Bulk 1,000
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    • 10000 $2.03
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    Vishay Siliconix IRF740LCPBF

    MOSFET N-CH 400V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF740LCPBF Tube 2,477 1
    • 1 $2.68
    • 10 $2.68
    • 100 $2.68
    • 1000 $2.68
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    Find more IRF740 price and stock on Findchips.com

    IRF740 Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF740 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF740 International Rectifier 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF740 Intersil 10A, 400V, 0.550 ?, N-Channel Power MOSFET Original PDF
    IRF740 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220 Original PDF
    IRF740 STMicroelectronics TRANS MOSFET N-CH 400V 10A 3TO-220 Original PDF
    IRF740 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF740 STMicroelectronics N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH MOSFET Original PDF
    IRF740 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF740 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220AB Original PDF
    IRF740 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF740 Fairchild Semiconductor N-Channel Power MOSFETs, 10A, 350V/400V Scan PDF
    IRF740 FCI POWER MOSFETs Scan PDF
    IRF740 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF740 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF740 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF740 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF740 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF740 International Rectifier HEXFET Power Mosfet Scan PDF
    ...

    IRF740 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf740lc

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF740LC, SiHF740LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740lc

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055


    Original     		PDF IRF740SPbF 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		PDF IRF740LC, SiHF740LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN609

    Abstract: IRF740A SiHF740A
    Text: IRF740A_RC, SiHF740A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF740A SiHF740A AN609, 11-Mar-10 AN609

    53216

    Abstract: AN609 IRF740AL IRF740AS SiHF740AL SiHF740AS
    Text: IRF740AS_RC, IRF740AL_RC, SiHF740AS_RC, SiHF740AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRF740AS IRF740AL SiHF740AS SiHF740AL AN609, 11-Mar-10 53216 AN609

    IRF740

    Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
    Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI transistor equivalent irf740 irf740 DATA SHEET

    F710

    Abstract: IRF7401 MS-012AA
    Text: PD - 9.1244C IRF7401 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS on = 0.022Ω


    Original     		PDF 1244C IRF7401 F710 IRF7401 MS-012AA

    SEC IRF740

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		PDF IRF740 O-220 SEC IRF740

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRF740A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		PDF IRF740A O-220 O-220

    SiHF740AL

    Abstract: IRF740AL IRF740AS SiHF740AL-E3 SiHF740AS SiHF740AS-E3 flyback xfmr 3.5 mh
    Text: IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance


    Original     		PDF IRF740AS, IRF740AL, SiHF740AS SiHF740AL O-263) O-262) 18-Jul-08 IRF740AL IRF740AS SiHF740AL-E3 SiHF740AS-E3 flyback xfmr 3.5 mh

    IRF7101

    Abstract: d 1497
    Text: PD - 95203 IRF7404PbF Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D


    Original     		PDF IRF7404PbF EIA-481 EIA-541. IRF7101 d 1497

    Untitled

    Abstract: No abstract text available
    Text: PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055


    Original     		PDF IRF740SPbF 12-Mar-07

    irf7404 datasheet

    Abstract: IRF7404 MS-012AA
    Text: PD - 9.1246C IRF7404 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS on = 0.040Ω


    Original     		PDF 1246C IRF7404 applicati10) irf7404 datasheet IRF7404 MS-012AA

    IRF7402

    Abstract: IRF7601
    Text: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


    Original     		PDF 3851A IRF7402 IRF7402 IRF7601

    Untitled

    Abstract: No abstract text available
    Text: IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRF740AS, SiHF740AS IRF740AL, SiHF740AL O-262) O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) () VGS = 10 V 0.55 Qg (Max.) (nC) 63 Qgs (nC) 9.0 Qgd (nC) 32 Configuration Single D D2PAK (TO-263) DESCRIPTION G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF740S, SiHF740S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF740, SiHF740 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRF740A, SiHF740A 2002/95/EC O-220AB 11-Mar-11

    AN-994

    Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
    Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRF740AS/LPbF O-262 IRF740A AN-994. AN-994 12V 10A SMPS 6-0A36 IRF740AS

    F1010

    Abstract: No abstract text available
    Text: PD - 94880 IRF740LCPbF • Lead-Free www.irf.com 1 12/10/03 IRF740LCPbF 2 www.irf.com IRF740LCPbF www.irf.com 3 IRF740LCPbF 4 www.irf.com IRF740LCPbF www.irf.com 5 IRF740LCPbF 6 www.irf.com IRF740LCPbF www.irf.com 7 IRF740LCPbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRF740LCPbF O-220AB O-220AB. F1010

    Untitled

    Abstract: No abstract text available
    Text: IRF740 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRF740 O-220

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF740/741 FEATURES T O -2 2 0 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF740/741 IRF740 IRF741