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    IRF740 TRANSISTOR Search Results

    IRF740 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF740 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF740

    Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
    Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI transistor equivalent irf740 irf740 DATA SHEET

    IRF740

    Abstract: IRF740FI
    Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF740 IRF740FI 100oC O-220 ISOWATT220 IRF740 IRF740FI

    Untitled

    Abstract: No abstract text available
    Text: <^/ v i, One. . 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel MOSFET Transistor IRF740 0(2) o DESCRIPTION * -> • Drain Current-ID= 10A@ TC=25°C I • Drain Source Voltage: VDSS= 400V(Min)


    Original     		PDF IRF740 O-220C

    power MOSFET IRF740

    Abstract: No abstract text available
    Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF740 TA17424 IRF740 power MOSFET IRF740

    irf740 mosfet

    Abstract: irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334
    Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet irf740 application note irf740 MOSFET IRF740 as switch TA17424 TB334

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334

    1kw sine wave inverter circuit diagram

    Abstract: IRF740 inverter inverter Controller PWM 1kw sine wave inverter 500w circuit 160kw induction motor 500w pwm DC motor controller pwm variable frequency drive circuit diagram dc to ac inverter with IRF740 drive Controller PWM 1kw IR2118
    Text: July 2000 ML4423* 1, 2, or 3-Phase Variable Speed AC Motor Controller GENERAL DESCRIPTION FEATURES The ML4423 provides the PWM sinewave drive signals necessary for controlling three phase AC induction motors as well as single and two phase split capacitor AC induction


    Original     		PDF ML4423* ML4423 DS4423-01 1kw sine wave inverter circuit diagram IRF740 inverter inverter Controller PWM 1kw sine wave inverter 500w circuit 160kw induction motor 500w pwm DC motor controller pwm variable frequency drive circuit diagram dc to ac inverter with IRF740 drive Controller PWM 1kw IR2118

    pwm variable frequency drive circuit diagram

    Abstract: IRF740 inverter winding diagram for single phase ac motor ML4423 single phase variable frequency drive circuit make three phase sine wave generator 3 phase sinewave generator irf740 application note 3phase variable frequency drive circuit diagram 3 phase sine wave pwm circuit
    Text: July 2000 ML4423* 1, 2, or 3-Phase Variable Speed AC Motor Controller GENERAL DESCRIPTION FEATURES The ML4423 provides the PWM sinewave drive signals necessary for controlling three phase AC induction motors as well as single and two phase split capacitor AC induction


    Original     		PDF ML4423* ML4423 pwm variable frequency drive circuit diagram IRF740 inverter winding diagram for single phase ac motor single phase variable frequency drive circuit make three phase sine wave generator 3 phase sinewave generator irf740 application note 3phase variable frequency drive circuit diagram 3 phase sine wave pwm circuit

    mosfet 1RF740

    Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
    Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 IRF743 IRF74 75BVdss mosfet 1RF740 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    LG diode 831

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


    OCR Scan     		PDF IRF740 LG diode 831

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:


    OCR Scan     		PDF 180x220 20x16 IRF740

    irf740 spice model

    Abstract: IRF740
    Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740

    gate drive circuit for power MOSFET IRF740

    Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
    Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 TA17424. gate drive circuit for power MOSFET IRF740 irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir

    OF IC 741

    Abstract: internal circuit diagram of IC 741 internal structure of ic 741 internal diagram of 741 IC 741 IC circuit diagram ic 741 application 741 IC IRF 740 ic 741 DIODE 741 IC circuit applications
    Text: Æ 7 SGS-THOMSON IRF 740/FI-741/FI IRF 742/FI-743/FI *•7 #» « »lllLICTW SSÖtEi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on 'd ' IRF740 IRF740FI 400 V 400 V 0.55 ß 0.55 S) 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0 0.55 0


    OCR Scan     		PDF 740/FI-741/FI 742/FI-743/FI IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI OF IC 741 internal circuit diagram of IC 741 internal structure of ic 741 internal diagram of 741 IC 741 IC circuit diagram ic 741 application 741 IC IRF 740 ic 741 DIODE 741 IC circuit applications

    F741

    Abstract: rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740
    Text: IRF740, IRF741, IRF742, IRF743 HARRIS a S E M I C O N D U C T O R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF740, IRF741, IRF742, IRF743 TB334 F741 rf74 power MOSFET IRF740 irf740 mosfet IRF741 IRF740 ir TA17424 gate driver circuit IRF741 Transistor IRF743 IRF740

    RF74

    Abstract: C5307 RF740
    Text: * 5 S G S -T H O M S O N i r f ?40 !LiOT iQ £I IR F 740 F I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI . . > . V dss RDS(on Id 400 V 400 V < 0.55 £2 < 0.55 a 10 A 5.5 A TYPICAL R DS(on) = 0.42 G AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF IRF740 IRF740FI IRF740FI RF74 C5307 RF740

    irf 740

    Abstract: IRF 740 N IRF 324 transistor IRF 740 741 TC IRF741FI 742FI 740FI diode 742
    Text: rZ 7 IRF 740/FI-741/FI IRF 742/FI-743/FI S G S -T H O M S O N [MD g[S(9 [i[L[l(gT»RilD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on) 'd " IRF740 IRF740FI 400 V 400 V 0.55 n 0.55 fi 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0.55


    OCR Scan     		PDF 740/FI-741/FI 742/FI-743/FI IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI irf 740 IRF 740 N IRF 324 transistor IRF 740 741 TC 742FI 740FI diode 742

    IRF74Q

    Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
    Text: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI


    OCR Scan     		PDF 740/FI-741/FI 742/FI-743/FI IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI IRF74Q IRF 740 N transistor irf 740 IRF 740 IRFJ40 ci 741

    IR F740

    Abstract: No abstract text available
    Text: • M3 0 SS7 1 00S40SÖ 23 HARRIS 3fl4 ■ HAS IRF740/741/74 2/743 IRF740R/741R/742R/743R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1 9 9 1 Package Features T 0 -2 2 0 A B • 8A and 10A, 3 5 0 V - 4 0 0 V T O P V IE W • r o s ° n = 0 .5 5 f i and 0 .8 f i


    OCR Scan     		PDF 00S40SÃ IRF740/741/74 IRF740R/741R/742R/743R IRF740, IRF741, IRF742, IRF743 IRF740R, IRF741R, IRF742R IR F740

    IRF740

    Abstract: IRF740FI
    Text: ¿57 S G S -T H O M S O N ¡m e ra « IR F 7 4 0 IR F 7 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F 740 IR F 740 F I V R DS on Id < 0.5 5 Q. < 0.5 5 Q. 10 A 5.5 A dss 400 V 400 V . TYPICAL RDS(on) = 0.42 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF IRF740 IRF740FI IRF740 IRF740FI O-220 ISOWATT220 IRF740/FI ISOWATT22Q

    IRF 740 N

    Abstract: LS 741 MTP8N45 transistor irf 740 IRF 740 TP8N45
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part N u m b er T h e s e T M O S P o w e r FETs a re d e s ig n e d fo r h ig h v o lta g e , h ig h spee d p o w e r s w itc h in g a p p lic a tio n s s u c h as s w itc h in g re g u la to rs ,


    OCR Scan     		PDF IRF740 IRF 740 N LS 741 MTP8N45 transistor irf 740 IRF 740 TP8N45

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    irf630 irf640

    Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
    Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40


    OCR Scan     		PDF T0-220AB 21A-02 IRF712 MTP2N40 IRF710 MTP3N40 IRF722 IRF720 MTP4N40 IRF732 irf630 irf640 MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20