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    IRF84 Search Results

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    IRF84 Price and Stock

    Vishay Siliconix IRF840BPBF

    MOSFET N-CH 500V 8.7A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF840BPBF Tube 5,057 1
    • 1 $2.09
    • 10 $2.09
    • 100 $2.09
    • 1000 $0.66039
    • 10000 $0.558
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    Vishay Siliconix IRF840PBF-BE3

    MOSFET N-CH 500V 8A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF840PBF-BE3 Tube 2,779 1
    • 1 $2.14
    • 10 $1.379
    • 100 $2.14
    • 1000 $0.78176
    • 10000 $0.78176
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    Vishay Siliconix IRF840LCLPBF

    MOSFET N-CH 500V 8A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF840LCLPBF Tube 1,965 1
    • 1 $3.15
    • 10 $3.15
    • 100 $3.15
    • 1000 $1.32376
    • 10000 $1.32376
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    Vishay Siliconix IRF840ASPBF

    MOSFET N-CH 500V 8A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF840ASPBF Tube 1,346 1
    • 1 $3.27
    • 10 $3.27
    • 100 $3.27
    • 1000 $1.11029
    • 10000 $1.02925
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    ComSIT USA IRF840ASPBF 400
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    New Advantage Corporation IRF840ASPBF 700 1
    • 1 -
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    • 100 -
    • 1000 $1.18
    • 10000 $1.18
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    Vishay Siliconix IRF840SPBF

    MOSFET N-CH 500V 8A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF840SPBF Tube 1,249 1
    • 1 $2.83
    • 10 $2.83
    • 100 $2.83
    • 1000 $0.94022
    • 10000 $0.84725
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    RS IRF840SPBF Bulk 5
    • 1 -
    • 10 $1.76
    • 100 $1.67
    • 1000 $1.49
    • 10000 $1.49
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    Bristol Electronics IRF840SPBF 23
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    ComSIT USA IRF840SPBF 549
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    New Advantage Corporation IRF840SPBF 850 1
    • 1 -
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    • 1000 $0.9733
    • 10000 $0.9733
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    IRF84 Datasheets (233)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF840 Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    IRF840 International Rectifier 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF840 Intersil 8A, 500V, 0.850 ?, N-Channel Power MOSFET Original PDF
    IRF840 Philips Semiconductors PowerMOS Transistor Avalanche Energy Rated Original PDF
    IRF840 STMicroelectronics N - CHANNEL 500V - 0.75Ohm - 8A - TO-220 PowerMESH MOSFET Original PDF
    IRF840 STMicroelectronics N-CHANNEL 500V - 0.75 ? - 8A - TO-220 POWERMESH Original PDF
    IRF840 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    IRF840 STMicroelectronics N-CHANNEL 500V - 0.75 Ohm - 8A TO-220 PowerMeshII MOSFET Original PDF
    IRF840 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    IRF840 Texas Instruments 10-Line to 4-Line BCD Priority Encoder Original PDF
    IRF840 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF840 Transys Electronics Power MOSFET ( VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A ) Original PDF
    IRF840 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO-220AB Original PDF
    IRF840 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF840 Fairchild Semiconductor N-Channel Power MOSFETs, 8A, 450 V/500V Scan PDF
    IRF840 FCI POWER MOSFETs Scan PDF
    IRF840 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF840 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF840 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF840 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transisotr, Field Effect, N-Channel, 500V, 8A, Pkg Style TO-220AB Scan PDF
    ...

    IRF84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


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    PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    PDF IRF840S, SiHF840S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94883 IRF840LCPbF • Lead-Free Document Number: 91067 12/11/03 www.vishay.com 1 IRF840LCPbF Document Number: 91067 www.vishay.com 2 IRF840LCPbF Document Number: 91067 www.vishay.com 3 IRF840LCPbF Document Number: 91067 www.vishay.com 4 IRF840LCPbF Document Number: 91067


    Original
    PDF IRF840LCPbF O-220AB 12-Mar-07

    DAT 1018 N

    Abstract: No abstract text available
    Text: PD- 95143 IRF840ASPbF IRF840ALPbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original
    PDF IRF840ASPbF IRF840ALPbF IRF840AS O-262 IRF840AL 08-Mar-07 DAT 1018 N

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    MOSFET IRF 540 AS A SWITCH

    Abstract: No abstract text available
    Text: PD- 94829 IRF840APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original
    PDF IRF840APbF AN1001) O-220AB 08-Mar-07 MOSFET IRF 540 AS A SWITCH

    Untitled

    Abstract: No abstract text available
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original
    PDF IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: PD- 95759 IRF840LCSPbF IRF840LCLPbF • Lead-Free Document Number: 91068 8/24/04 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com


    Original
    PDF IRF840LCSPbF IRF840LCLPbF IRF840LCS/LPbF 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF840B/IRFS840B IRFS840 IRFS840A IRFS840BT IRFS840B O-220F O-220F O-220F-3 AN-4121:

    AN609

    Abstract: IRF840LC SiHF840LC
    Text: IRF840LC_RC, SiHF840LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF IRF840LC SiHF840LC AN609, 18-Mar-10 AN609

    IRF840LCPBF

    Abstract: IRF840LC SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating


    Original
    PDF IRF840LC, SiHF840LC 18-Jul-08 IRF840LCPBF IRF840LC SiHF840LC-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF840S FEATURES • • • • • • • • D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirement Lead Pb -free Available D2PAK (TO-263) G G D S S N-Channel MOSFET


    Original
    PDF IRF840S O-263) SMD-220

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original
    PDF IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent

    AN-994

    Abstract: IRF840LC IRF840LCL IRF840LCS
    Text: PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated D VDSS = 500V RDS on = 0.85Ω


    Original
    PDF IRF840LCS IRF840LCL 12-Mar-07 AN-994 IRF840LC IRF840LCL IRF840LCS

    irf840

    Abstract: datasheet irf840 mosfet IRF840 MOSFET
    Text: 深爱半导体有限公司 产品参数 IRF840 N-Channel Power MOSFET 特点 噪声低 输入阻抗高 开关时间快 应用 电子镇流器 电子变压器 开关电源 最大额定值 Tc=25°C 参数名称 TO-220 VDS=500V 符号 额定值 单位 漏极


    Original
    PDF IRF840 O-220 irf840 datasheet irf840 mosfet IRF840 MOSFET

    IRF840LC

    Abstract: SiHF840LC SiHF840LC-E3
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 11-Mar-11 IRF840LC SiHF840LC-E3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


    Original
    PDF O-220 IRF840 O-220

    IRF840LCPBF

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original
    PDF IRF840LC, SiHF840LC 2002/95/EC 11-Mar-11 IRF840LCPBF

    IRF9521

    Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
    Text: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0


    OCR Scan
    PDF O-220 IRF840 IRF842 IRF830 IRF832 IRF820 IRF822 IRFBC40 IRFBC42 IRFBC30 IRF9521 IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32

    irf8408

    Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
    Text: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description


    OCR Scan
    PDF IRF440-443/IRF840-843 MTM7N45/7N50 T-39-11 IRF440 IRF441 IRF442 IRF443 MTM7N45 MTM7N50 O-220AB irf8408 IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441

    Untitled

    Abstract: No abstract text available
    Text: IRF840S A d van ced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan
    PDF IRF840S

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1069 International ioR R ectifier IRF840LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated


    OCR Scan
    PDF IRF840LC D-6380 0021b21

    Ultra High Voltage Hexfets

    Abstract: dioda rectifier EMBI IRF1010 IRF840LC dioda 12B dioda OA 50 TF 100 FEMA
    Text: PD-9.1069 International S Rectifier IRF840LC HEXFET* Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss> Coss. Crss Extremely High Frequency Operation Repetitive Avalanche Rated Vdss= 500V


    OCR Scan
    PDF IRF840LC 71321S. B172-OTM1 963C6 Ultra High Voltage Hexfets dioda rectifier EMBI IRF1010 IRF840LC dioda 12B dioda OA 50 TF 100 FEMA