IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
|
Original
|
IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
|
PDF
|
IRF9510
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
O-220
O-220
18-Jul-08
IRF9510
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
11-Mar-11
|
PDF
|
IRF9510
Abstract: TA17541
Text: IRF9510 Data Sheet January 2002 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
|
Original
|
IRF9510
IRF9510
TA17541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRF9510
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
O-220
O-220
18-Jul-08
IRF9510
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
IRF9510
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF9510
|
PDF
|
irf9510
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
O-220
O-220
12-Mar-07
irf9510
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
IRF9510,
SiHF9510
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
irf 425
Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
Text: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815
|
Original
|
HIP4080AIP
ICM7243BIPL
IRF3515S
IRF840
HIP4081AIP
ICM7555CN
IRF3710
HIP4082IP
ICM7555IBA
irf 425
ICL8038CCPD
HSMS-2820-BLK
icl8038ccjd
IRF 315
HSDL-1001-001
hsmp-3890
ICL232CPE
HSMP 2820
ICM7211AMIPL
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IRF9510 Data Sheet Title F95 bt A, 0V, 00 m, Chanwer OST utho eyrds ter- July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of
|
Original
|
IRF9510
|
PDF
|
IRF9510
Abstract: IRF9513
Text: P-CHANNEL POWER MOSFETS IRF9510/9511/9512/9513 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
IRF9510/9511/9512/9513
F9510
IRF9512
IRF9513
IRF9510
|
PDF
|
IRF9610
Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540
|
OCR Scan
|
O-220
IRF9512
TQ-220AB
IRF9510
IRF9522
IRF9520
IRF9532
IRF9530
IRF9542
IRF9540
IRF9610
IRFP143
IRF9612
IRFP240
THOMSON DISTRIBUTOR 58e d
IRFP142
IRFP141
IRFP243
THOMSON 58E
THOMSON 58E CASE OUTLINE
|
PDF
|
IRF9511
Abstract: IRF9510 f951
Text: P-CHANNEL POWER MOSFETS IRF9510/9511/9512/9513 FEATURES • • • • • • • Lower Rds io n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
|
OCR Scan
|
IRF9510/9511/9512/9513
IRF951
IRF9511
IRF9510
f951
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of
|
OCR Scan
|
IRF9510
-100V,
O-220AB
-100V
|
PDF
|
1RF9510
Abstract: 390D IRF9510 IRF9510S ScansUX102 ls40a w5A marking
Text: PD-9.390D International lâjll Rectifier IRF9510 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S ~ "1 0 0 V
|
OCR Scan
|
IRF9510
O-220
-100V
1RF9510
390D
IRF9510S
ScansUX102
ls40a
w5A marking
|
PDF
|
1RF9620
Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Text: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542
|
OCR Scan
|
-25cC)
IRF9240
IRFS241
25F9542
O-220
IRF9543
IRF961G
IRF9612
1RF9620
1RF9540
1RF9622
IRF9532
IRF9522
IRF9523
IRF9611
IRF9630 samsung
IRF9613
|
PDF
|
IRF9511
Abstract: IRF9510 IRF9510 harris irf9512
Text: IRF9510, IRF9511, IRF9512, IRF9513 HARRIS S E M I C O N D U C T O R -2.5A and -3.0A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -2.5A and -3.0A, -80V and -100V These are P-Channel enhancement mode silicon gate
|
OCR Scan
|
IRF9510,
IRF9511,
IRF9512,
IRF9513
-100V,
TA17541.
RF9512,
IRF9511
IRF9510
IRF9510 harris
irf9512
|
PDF
|
IRF9510
Abstract: marking lora 390D irf9510 IR
Text: PD-9.390D International S Rectifier IRF9510 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -1 0 0 V
|
OCR Scan
|
IRF9510
O-220
-100V
IRF9510
marking lora
390D
irf9510 IR
|
PDF
|
IRF9511
Abstract: irf9510
Text: P-CHANNEL POWER MOSFETS IRF9510/9511 FEATURES TO-220 • Lower R o s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
|
OCR Scan
|
IRF9510/9511
IRF9510
-100V
IRF9511
71bMma
002flt104
|
PDF
|
