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    IRF9530N Search Results

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    IRF9530N Price and Stock

    Infineon Technologies AG IRF9530NPBF

    MOSFET P-CH 100V 14A TO220AB
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    DigiKey IRF9530NPBF Tube 26,548 1
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    Avnet Americas IRF9530NPBF Bulk 16 Weeks, 3 Days 1
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    Newark IRF9530NPBF Bulk 1,122 1
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    Infineon Technologies AG IRF9530NSTRLPBF

    MOSFET P-CH 100V 14A D2PAK
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    DigiKey IRF9530NSTRLPBF Digi-Reel 232 1
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    Infineon Technologies AG IRF9530NL

    MOSFET P-CH 100V 14A TO262
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    DigiKey IRF9530NL Tube 50
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    Infineon Technologies AG IRF9530NS

    MOSFET P-CH 100V 14A D2PAK
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    DigiKey IRF9530NS Tube 50
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    Win Source Electronics IRF9530NS 30,900
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    Infineon Technologies AG IRF9530NSPBF

    MOSFET P-CH 100V 14A D2PAK
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    IRF9530N Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9530N International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9530N with Standard Packaging Original PDF
    IRF9530N International Rectifier HEXFET Power MOSFET Original PDF
    IRF9530N Microcomputer Components 8-Bit CMOS Single-Chip Microcontroller Original PDF
    IRF9530N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9530N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, Power, -100V, -12A, Pkg Style TO-220AB Scan PDF
    IRF9530NL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; A IRF9530NL with Standard Packaging Original PDF
    IRF9530NL International Rectifier HEXFET Power MOSFET Original PDF
    IRF9530NL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9530NLPBF International Rectifier Advanced Process Technology Surface Mount Original PDF
    IRF9530NLPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9530NL with Lead Free Packaging Original PDF
    IRF9530NPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF9530NPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF9530N with Lead-Free Packaging. Original PDF
    IRF9530NS International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9530NS with Standard Packaging Original PDF
    IRF9530NS International Rectifier HEXFET Power MOSFET Original PDF
    IRF9530NS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF9530NS International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF
    IRF9530NSPBF International Rectifier Advanced Process Technology Surface Mount Original PDF
    IRF9530NSPBF International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9530NS with Lead Free Packaging Original PDF
    IRF9530NSTRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRF9530NSTRL International Rectifier -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF9530NS with Tape and Reel Left Packaging Original PDF

    IRF9530N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9530N

    Abstract: No abstract text available
    Text: PD - 9.1482A IRF9530N PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -13A


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    PDF IRF9530N -100V O-220 IRF9530N

    IRF9530N

    Abstract: IR P-Channel mosfet
    Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91482C IRF9530N -100V O-220 IRF9530N IR P-Channel mosfet

    IRL3103L

    Abstract: No abstract text available
    Text: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF


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    PDF IRF9530NSPbF IRF9530NLPbF IRF9530NS/LPbF EIA-418. IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: IRF9530N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original
    PDF IRF9530N O-220AB O-220 -100V

    GATE DRIVER

    Abstract: No abstract text available
    Text: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRF9530NPbF -100V O-220 O-220AB. O-220AB GATE DRIVER

    IRF9530NL

    Abstract: IRF9530NS
    Text: PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9530NS l Low-profile through-hole (IRF9530NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.20Ω


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    PDF 1523A IRF9530NS/L IRF9530NS) IRF9530NL) -100V IRF9530NL IRF9530NS

    IRF9530NL

    Abstract: IRF9530NS
    Text: PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9530NS l Low-profile through-hole (IRF9530NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.20Ω


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    PDF 1523A IRF9530NS/L IRF9530NS) IRF9530NL) -100V IRF9530NL IRF9530NS

    IRF9530N

    Abstract: No abstract text available
    Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91482C IRF9530N -100V O-220 IRF9530N

    Untitled

    Abstract: No abstract text available
    Text: IRF9530NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D2 P a k T O -2 6 2 Description The D2Pak is a surface mount power package capable of


    Original
    PDF IRF9530NS/L IRF9530NS) IRF9530NL) -100V

    Untitled

    Abstract: No abstract text available
    Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91482C IRF9530N -100V O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRF9530NPbF -100V O-220 O-220AB. O-220AB

    EIA-418

    Abstract: No abstract text available
    Text: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free 1 IRF9530NS/LPbF 2 IRF9530NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"


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    PDF IRF9530NSPbF IRF9530NLPbF IRF9530NS/LPbF F530S EIA-418. EIA-418

    Untitled

    Abstract: No abstract text available
    Text: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier


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    PDF IRF9530NPbF -100V O-220 O-220AB

    IRL3103L

    Abstract: No abstract text available
    Text: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF


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    PDF IRF9530NSPbF IRF9530NLPbF IRF9530NS/LPbF EIA-418. IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: 19-3443; Rev 1; 6/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device


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    PDF MAX5924/MAX5925/MAX5926

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    IRFR P-Channel MOSFET

    Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
    Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


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    PDF IRFR/U5410 IRFR5410) IRFU5410) -100V IRFR P-Channel MOSFET IRFR5410 IRFU5410 pcb layout for TO 252AA

    Untitled

    Abstract: No abstract text available
    Text: P D -9.1523 International I Q R Rectifier IRF9530NS/L PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Surface Mount IRF9530NS • Low-profile through-hole (IRF9530NL) • 175°C Operating Temperature • Fast Switching • P-Channel


    OCR Scan
    PDF IRF9530NS/L -100V IRF9530NS) IRF9530NL)

    IRF9530N

    Abstract: No abstract text available
    Text: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan
    PDF IRF9530N O-220 IRF9530N

    diode SM 78A

    Abstract: No abstract text available
    Text: PD - 9.1482A International IO R Rectifier IRF9530N PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan
    PDF IRF9530N O-220 diode SM 78A

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 5 2 3 International IQR Rectifier PRELIMINARY IRF9530NS/L HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel


    OCR Scan
    PDF IRF9530NS/L IRF9530NS) IRF9530NL) 7792C

    84a DIODE

    Abstract: IRF9530* p-channel power MOSFET irf9530N irf1010 applications international rectifier p0
    Text: I PD - 9.1482B International XQR Rectifier IRF9530N PRELIMINARY HEXFET* Power MOSFET • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching VDSS = -100V ^ D S o n • P-Channel


    OCR Scan
    PDF 1482B IRF9530N -100V O-220 84a DIODE IRF9530* p-channel power MOSFET irf9530N irf1010 applications international rectifier p0

    Untitled

    Abstract: No abstract text available
    Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V


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    PDF IRFR/U5410