Contextual Info: P D -9.1523 International I Q R Rectifier IRF9530NS/L PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Surface Mount IRF9530NS • Low-profile through-hole (IRF9530NL) • 175°C Operating Temperature • Fast Switching • P-Channel

IRF9530N

Contextual Info: PD - 9.1482A IRF9530N PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -13A

IRF9530N

Contextual Info: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

diode SM 78A

Contextual Info: PD - 9.1482A International IO R Rectifier IRF9530N PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: P D - 9 .1 5 2 3 International IQR Rectifier PRELIMINARY IRF9530NS/L HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel

IRF9530N

Abstract: IR P-Channel mosfet
Contextual Info: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier

IRL3103L

Contextual Info: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF

Contextual Info: IRF9530N TO-220AB l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

GATE DRIVER

Contextual Info: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier

IRF9530NL

Abstract: IRF9530NS
Contextual Info: PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9530NS l Low-profile through-hole (IRF9530NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.20Ω

84a DIODE

Abstract: IRF9530* p-channel power MOSFET irf9530N irf1010 applications international rectifier p0
Contextual Info: I PD - 9.1482B International XQR Rectifier IRF9530N PRELIMINARY HEXFET* Power MOSFET • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching VDSS = -100V ^ D S o n • P-Channel

IRF9530NL

Abstract: IRF9530NS
Contextual Info: PD - 91523A IRF9530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9530NS l Low-profile through-hole (IRF9530NL) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.20Ω

IRF9530N

Contextual Info: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF9530NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D2 P a k T O -2 6 2 Description The D2Pak is a surface mount power package capable of

Contextual Info: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier

EIA-418

Contextual Info: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free 1 IRF9530NS/LPbF 2 IRF9530NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H LOT CODE 8024 ASSEMBLE D ON WW 02, 2000 IN T HE ASSE MBLY LINE "L"

Contextual Info: PD - 94980 IRF9530NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier

IRL3103L

Contextual Info: PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.irf.com 3 IRF9530NS/LPbF 4 www.irf.com IRF9530NS/LPbF www.irf.com 5 IRF9530NS/LPbF 6 www.irf.com IRF9530NS/LPbF www.irf.com 7 IRF9530NS/LPbF

IRFR5410

Abstract: IRFU5410 100v P-Channel DPAK U5410
Contextual Info: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description

Contextual Info: 19-3443; Rev 1; 6/06 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device

Contextual Info: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRFR P-Channel MOSFET

Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
Contextual Info: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description