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    IRF9640 MOSFET Search Results

    IRF9640 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF9640 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9640

    Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
    Text: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate


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    PDF IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, -200V IRF9640 RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A

    IRF9640 equivalent

    Abstract: irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
    Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


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    PDF IRF9640, RF1S9640SM TA17522. IRF9640 equivalent irf9640 pdf switch IRF9640 transistor IRF9640 datasheet irf9640 mosfet RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334

    SiHF9640

    Abstract: irf9640
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    PDF IRF9640, SiHF9640 O-220 O-220 12-Mar-07 irf9640

    IRF9640

    Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
    Text: IRF9640, RF1S9640SM Data Sheet 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


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    PDF IRF9640, RF1S9640SM TA17522. IRF9640 RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334

    SiHF9640

    Abstract: IRF9640
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRF9640, SiHF9640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9640

    Untitled

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRF9640, SiHF9640 O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9640

    Abstract: SiHF9640 datasheet irf9640 mosfet IRF9640PBF SiHF9640-E3 8127 irf9640 mosfet power transformer type B
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    PDF IRF9640, SiHF9640 O-220 O-220 18-Jul-08 IRF9640 datasheet irf9640 mosfet IRF9640PBF SiHF9640-E3 8127 irf9640 mosfet power transformer type B

    irf9640

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


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    PDF IRF9640, SiHF9640 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf9640

    IRF9640

    Abstract: RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334
    Text: IRF9640, RF1S9640SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


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    PDF IRF9640, RF1S9640SM TA17522. TB334, IRF9640 O-220AB IRF9640 RF1S9640 RF1S9640SM RF1S9640SM9A TA17522 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    PDF IRF9640, SiHF9640 O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    PDF IRF9640, SiHF9640 O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRF9640, SiHF9640 O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9640

    Abstract: IRF9642 RF1S9640SM IRF9643 IRF9641
    Text: S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate


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    PDF IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, TA17522. 199st IRF9640 IRF9642 RF1S9640SM IRF9643 IRF9641

    Untitled

    Abstract: No abstract text available
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    PDF IRF9640, SiHF9640 2002/95/EC O-220AB O-220AB 11-Mar-11

    IRF9640

    Abstract: SiHF9640 SiHF9640-E3
    Text: IRF9640, SiHF9640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single S RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original
    PDF IRF9640, SiHF9640 O-220AB 11-Mar-11 IRF9640 SiHF9640-E3

    irf9640

    Abstract: IRF9641
    Text: P-CHANNEL POWER MOSFETS IRF9640/9641 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF IRF9640/9641 IRF9640 -200V IRF9641 -150V

    f9640

    Abstract: IRF9640 9641 IRF9640.9641 IRF9643 IRF9642 IRF9641 9642
    Text: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 FEATURES • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polyslllcon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF IRF9640/9641 F9640 IRF9641 IRF9642 F9643 --11A IRF9640 9641 IRF9640.9641 IRF9643 9642

    1RF9640

    Abstract: IRF9640 9422B 422B
    Text: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description


    OCR Scan
    PDF IRF9640 -200V O-220 T0-220 1RF9640 IRF9640 9422B 422B

    irf9640n

    Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
    Text: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A


    OCR Scan
    PDF IRF9640 -200V O-220 1RF9640S irf9640n 1RF9640 422B D66A IRF9640S

    IRF9640

    Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
    Text: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d


    OCR Scan
    PDF IRF9640, IRF9641 IRF9642, IRF9643 IRF9641, IRF9642 92CS43279 97CS-43280 IRF9640 transistor IRF9640 irf9640 mosfet IRF9643 f9640

    IRF9640

    Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
    Text: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •


    OCR Scan
    PDF IRF9640/9641 IRFP9240/9241 IRF9640/IRFP9240 -200V IRF9641 /IRFP9241 -150V IRF9642/IRFP9242 IRF9643/IRFP9243 IRF9640 irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IIRF9640

    IRF9640

    Abstract: IRFP9240-3 irfp9240
    Text: P-CHANNEL POWER MOSFETS IRF9640/9641 /9642/9643 IRFP9240/9241 /9242/9243 FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching times R u g ge d polysilicon gate ceil structure Lower input capacitance Extended safe operating area


    OCR Scan
    PDF IRF9640/9641 IRFP9240/9241 IRF9640 IRFP9240 IRF9641 IRFP9241 IRF9640/9641Z9642/9643 IRFP9240-3

    IRF9640

    Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
    Text: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate


    OCR Scan
    PDF IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, TA17522. IRF9640 IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641

    IRF9640

    Abstract: No abstract text available
    Text: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate


    OCR Scan
    PDF IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -150V -200V, and-200V IRF9640