Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFBC40
Abstract: SiHFBC40 37AB irfbc40 free SiHFBC40-E3
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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IRFBC40,
SiHFBC40
O-220
O-220
18-Jul-08
IRFBC40
37AB
irfbc40 free
SiHFBC40-E3
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
|
Original
|
IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
|
Original
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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INTERNATIONAL RECTIFIER IRFBC40
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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IRFBC40,
SiHFBC40
O-220
O-220
12-Mar-07
INTERNATIONAL RECTIFIER IRFBC40
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
|
Original
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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37AB
Abstract: IRFBC40 SiHFBC40 SiHFBC40-E3
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
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IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
O-220AB
11-Mar-11
37AB
IRFBC40
SiHFBC40-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
|
IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
|
IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 RoHS* Qg (Max.) (nC) 60 • Fast Switching Qgs (nC) 8.3 • Ease of Paralleling 30 • Simple Drive Requirements
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Original
|
IRFBC40,
SiHFBC40
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRFBC40L
Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
IRFBC40L
IRFBC40S
SiHFBC40L-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
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PDF
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S2186
Abstract: SCOP 200-002 IRs2186 application note
Text: IRS2186 4 (S)PBF High and Low Side Driver Features • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 V to 20 V
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Original
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IRS2186
S2186
SCOP 200-002
IRs2186 application note
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PDF
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IR2106 APPLICATION NOTE
Abstract: ir2106pbf ir2106s datasheet IRFBC30 IR2106 IR21064 IR21064S IR2106S IRFBC20 IRFBC40
Text: Data Sheet No. PD60162 Rev. W IR2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
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Original
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PD60162
IR2106
IR2106)
14-Lead
2106/2301//2108//2109/2302/2304Feature
IR2106
IR2106 APPLICATION NOTE
ir2106pbf
ir2106s datasheet
IRFBC30
IR21064
IR21064S
IR2106S
IRFBC20
IRFBC40
|
PDF
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IR2106 APPLICATION NOTE
Abstract: IR2106S
Text: Data Sheet No. PD60162 Rev. W IR2106 4 (S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
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Original
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PD60162
IR2106
IR2106)
14-Lead
2106/2301//2108//2109/2302/2304Feature
IR2106
IR2106S
IR2106 APPLICATION NOTE
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PDF
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irfbc
Abstract: IRFBC40STRLPBF
Text: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)
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Original
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IRFBC40S,
SiHFBC40S
IRFBC40L,
SiHFBC40L
irfbc
IRFBC40STRLPBF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V
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Original
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PD60161-R
IR2108
14-Lead
IR21084S
IR2108S
IR21084
IR2108
540ns
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PDF
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IR2108
Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
Text: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V
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Original
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PD60161-R
IR2108
14-Lead
IR21084S
IR2108S
IR21084
IR2108
540ns
IR21084
mosfet te 2304
IR21084S
IR2108S
IRFBC20
IRFBC30
IRFBC40
IRFPE50
PD60161-R
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PDF
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IR2109 application note
Abstract: IR21094 IR21094 application note IR2109 application IR2109 IRFBC30 IR21094S IR2109S IRFBC20 IRFBC40
Text: Data Sheet No. PD60163-U IR2109 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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Original
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PD60163-U
IR2109
540ns
IR21094)
IR2109
IR2109S
14-Lead
IR21094
SOICIR21094S
IR2109 application note
IR21094
IR21094 application note
IR2109 application
IRFBC30
IR21094S
IR2109S
IRFBC20
IRFBC40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD60163-U IR2109 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V
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Original
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PD60163-U
IR2109
540ns
IR21094)
IR2109
IR2109S
14-Lead
IR21094
SOICIR21094S
|
PDF
|
IRFBC30
Abstract: OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20
Text: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Packages Features • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune
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Original
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PD60262
IRS2181/IRS21814
IRS2181
14-Lead
IRS21814
IRS2181S
114-Lead
IRS21814S
IRS2181PbF
IRFBC30
OC140
IRFBC40
IRFPE50
IRS2181
IRS21814
IRS2181S
IRFBC20
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PDF
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