EBG3402S

Abstract: TE 555 "TE 555" M50555 EBG3432S SLP235 SLR-33YC TE 555-2 LN421YP LN477YCPX
Contextual Info: , & ft it kk Î* fias fctg fê'frnlSÎŒ , = 25'C' K«3t;£ •i"€rt m 2 OVt 'deg' A/- •m. 70 590 20 2.2 20 30 * iS 40 590 20 2.2 20 30 4 40 590 20 2.2 20 30 4 - 25-85 5 LN477YCPX *£ 160 m 21 2.2 20 30 -25-85 U LN476YPX m i 200 590 20 2.2 20 30 -25-85

IRFC9130

Abstract: SNF80504 IRFC360 IRFC250 SPF8
Contextual Info: I to MOSFETS HI Ik A o s DUAL N CHANNEL PO W ER M O SFETS PACKAGE 6 PIN SIP TO-61 ISOLATED RDS(ON *D DEVICE bvdss @ 0 .5 ' d CONTINUOUS Pd TYPE VOLTS OHMS OHMS WATTS CHIP SND600 600 0.6 IXTD15N60 SND500 500 0.4 11.0 14.0 125 125 IRFC450 SND460 600 20.0 125

B92M

Abstract: ESAB92M-02 A222 voltage A224
Contextual Info: ESAB92M-02 5A 4.5" LOW LOSS SUPER HIGH SPEED RECTIFIER J T •45^1 : Features JEDEC Insulated package by fully m o ld in g . EIAJ • 1feVF SC-67 mm*» Low V f Connection Diagram Super high speed sw itchin g. High reliability by planer design. ■ ! Applications

Ultra Fast Rectifiers

Contextual Info: Back to Ultra Fast Rectifiers NSG2599 NSG2600 NSG2601 NSG2602 POWER RECTIFIERS U ltra -F a st R ectifiers Low Forw ard Voltage M atched Dual Die C onstruction C enter Tap C om m on C athode ULTRA FAST RECTIFIERS 8 AMPERES JNSG26Ü0/ JNSG26U1 150°C O perating T em perature

Contextual Info: ESJC 30|4 . 5 k V , 7 . 2 k V 3f*—K : Outline Drawings HIGH VOLTAGE SILICON DIODE E S J C 3 0 * , y | # - 5 i a f f '> U 3 ^ 'y 7 , 4 r X iJ i+ - > i» |jg t c T iiih L f c a E S JC 30 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a

Contextual Info: J& & REV. St7Z9£0PS -ON ON lMVHa ##fflm B DATE DON K 35 ^ D E S C R I PTION NO. IK S a i CHK. DR. BS APPD. * l& APPD. ± 2 LTI 3 8 0 N 0 T E2 (SCALE ( 4.74 ) < ENDING PORTION BEGINNING SECT. B- B (SCALE 2:1 ) N 1 PORTION u— (400mm W/0 CONNECTOR W/H

ZWQ80-5222

Abstract: s 5225 ZWQ80-5224 130-5225 LAMBDA over Voltage s224 marking V4 MARKING ZWQ130-5225 ZWQ80-5225 ZWQ80
Contextual Info: ZWQ -SERIES LAMBDAA DENSEI-LAMBDA Quad output 80W - 130W Model name ZWQ 80-5225/ Output Voltage Series Name Output Wattage Option blank: PCB type L: L-shape metat plate type PC Board Type Power Supply • Features • Built-in Active F ilte r, PFHC type {EN61000-3-2

Contextual Info: 8T-LED With LED Pushbutton Switches i Features The 8T-LED Pushbutton Switch is the same as the 8R Soft Touch Pushbutton Switch except that it has a light emitting diode LED in the button. Since an LED is used for illumination, the LED consumes less current

Contextual Info: ERC90-02 5A LOW LOSS SUPER HIGH SPEED RECTIFIER • t t J t : Features •te V F Low VF Super high speed switching. Connection Diagram • 7 ^ — High reliability by planer design. * Applications High speed power switching. Maximum Ratings and Characteristics

ERC90-02

Abstract: T151 erc90 T460
Contextual Info: ERC90-02 5A LOW LOSS SUPER HIGH SPEED RECTIFIER • t t J t : Features •fl&Vp Low VF Super high speed switching. Connection Diagram High reliability by planer design. : Applications High speed power switching. Maximum Ratings and Characteristics : Absolute Maximum Ratings

IRf 724 N

Contextual Info: TO SH IBA b TMP90CM36/M37 2-byte transfer mode MCU90-23 ^724=) 003043G 52^ TO SH IBA TMP90CM36/M37 3.3.3 Interrupt Controller Figure 3.3 (7) shows an abbreviated interrupt circuit diagram. The left h alf of this diagram shows the interrupt controller and the right h alf shows the CPU interrupt

M63954P

Contextual Info: MITSUBISHI SEMICONDUCTORS <HVIC> M63954P HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M63954P is high voltage integrated circuit designed for electronic ballast, Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW

Contextual Info: fZ 7 ^ 7# S G S -T H O M S O N U O T s M S 5 TD A2320A MINIDIP STEREO AMPLIFIER • W IDE SUPPLY VOLTAGE RANGE (3 to 36 V) ■ SINGLE OR SPLIT SUPPLY OPERATION ■ VERY LO W CURRENT CONSUMPTION (0.8 mA) ■ VERY LOW DISTORTION ■ NO POP-NOISE ■ SHO RT CIRCUIT PROTECTION

Contextual Info: i h i I— : A v « m m m. - V • 1 ■ a. ■ - V IN h l IK M A I II 1IM IM C 1 I i— »■*■ 'w'>■■»*' * ■■vi i ^ TFST IU IO IN ■*“ W 1 1 1* W lD ^ f cF - i «■ ' 1 1 'fiM-MFNFHÛ '» '* « ■ - ■ < » « f t i « TION i «v i > We*dilchs Technloal Marketing Memories

HM1042

Abstract: HM10422
Contextual Info: HM10422 2 5 6 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The HM 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages.

5KR33

Abstract: 5KR30 5KR24 5KF22CA 5kf70a 5kf60c 5kf36a 5KF51 5kr45ca 5KR36C
Contextual Info: T ra n s ie n t V oltag e S u p p re s s io n TV S D io d e s C aY O O M Control overpower 1.2 - 1.3 fim s ib fe P rotection MAXIMUM RATINGS When no problems exist, Oyctoiri TVS • Peak pulse power (Ppk): 5000 watts Diodes are totally invisible to the circuits

MTP6N60E equivalent

Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
Contextual Info: Infineon Technologies Cross Reference List CoolMOS CoolMOS Company Product Name VDS [V] IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS IRF830S IRF840 IRF840A IRF840AS IRF840LCS IRF840S

Contextual Info: January 1997 PAIRCHII-D iMICDNDUCTQR t m NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description S u p erS O T -3 N -C h a n n e l Features logic level enhancem ent m ode 1 .7 A , 3 0 V , R,DS ON p o w e r field e ffec t transistors a re prod uced using Fairchild's

F6KE200

Abstract: F6KE200A R6KE P6KB F6KE200C R6KE30 R6KE24 F6KE400A F6KE27A F6KE36CA
Contextual Info: T r a n s i e n t Voltage S u p p r e s s i o n T V S D i o d e s + P6KE8.8 + Series P6KE400CA C aY O O M Control overpower 0.76 " 0.86 fim s ib fe P rotection MAXIMUM RATINGS When no problems exist, Oyctoiri TVS • Peak pulse power (P pk) : Diodes are totally invisible to the circuits

TC9214AP

Abstract: TC9214 1s311
Contextual Info: T O S H IB A C M O S D IG ITAL IN TEG RA T ED CIRCUIT INTEGRATED TOSHIBA CIRCUIT I t L .M N IL .A L TC9214AP, TC9214AF TC9215AP, TC9215AF U A IA ÌIL IL .U N I V I U N U L I I MIL. HIGH VOLTAGE ANALOG SWITCH TC9214AP/AF, TC9215AP/AF are Analog Switch for high

TC9273N

Contextual Info: TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED T O SH IB A CIRCUIT I t L .M N IL .A L TC9273N, TC9273F TC9274N, TC9274F U A IA ÌIL IL .U N I V I U N U L I I MIL. ANALOG SWITCH ARRAY ICs TC9273N, TC9273F, TC9274N and TC9274F are analog switch array ICs developed for use in audio equipment

transistor fn 155

Abstract: ay- 8500 system transistor H1A s3 tech
Contextual Info: INTEGRATED TO SH IB A TO SH IBA CCD A R EA IMAGE SENSOR CIRCUIT TECH N ICAL TCD5340C D ATA CCD Charge Coupied Device GENERAL TCD5340C is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 1163 (h o rizo n ta l)x 492

M820T

Abstract: csb455b
Contextual Info: INTEGRATED TO SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT DATA TC9290P, TC9290F SILICON MONOLITHIC KEY SCAN 1C TC9290P, TC9290F is detected key input and transmitted serial data to controller which is suited for extension of DTS or MPU.

Contextual Info: INTEGRATED TOSHIBA TO SHIBA CCD A R EA IM AGE SENSOR CIRCUIT TECHNICAL TCD5120AC DATA CCD Charge Coupied Device GENERAL TCD5120AC is a frame interline CCD area image sensor developed for a 3-CCD color camera (NTSC TV system). This device has signal pixels of 772 (horizontal) x492