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Vishay Siliconix IRFD123PBF MOSFET N-CH 100V 1.3A 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD123PBF	Bulk	3,184		1	1 $1.93 10 $1.23 100 $1.93 1000 $0.60233 10000 $0.54256	Buy Now
Rochester Electronics LLC IRFD121 SMALL SIGNAL N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD121	Bulk			666	1 - 10 - 100 - 1000 $0.45 10000 $0.45	Buy Now
Vishay Siliconix IRFD120 MOSFET N-CH 100V 1.3A 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD120	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IRFD120		95		3	1 - 10 $2.0475 100 $1.2797 1000 $1.2797 10000 $1.2797	Buy Now
Quest Components	IRFD120		200			1 $0.63 10 $0.63 100 $0.42 1000 $0.294 10000 $0.294	Buy Now
	IRFD120		40			1 $1.0435 10 $0.8348 100 $0.6261 1000 $0.6261 10000 $0.6261	Buy Now
ComSIT USA	IRFD120		2,407			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC IRFD123 MOSFET N-CH 100V 1.3A 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD123	Tube			346	1 - 10 - 100 - 1000 $0.87 10000 $0.87	Buy Now
Vishay Siliconix IRFD120PBF MOSFET N-CH 100V 1.3A 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD120PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.54256	Buy Now
RS	IRFD120PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.93	Get Quote
ComSIT USA	IRFD120PBF		730			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IRFD120PBF		16,000		1	1 - 10 - 100 - 1000 $0.8929 10000 $0.8929	Buy Now

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IRFD12 Datasheets (79)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFD120	Fairchild Semiconductor	N-Channel Power MOSFET	Original	PDF
IRFD120	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRFD120	Intersil	1.3A, 100V, 0.300 ?, N-Channel Power MOSFET	Original	PDF
IRFD120	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFD120	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP	Original	PDF
IRFD120	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFD120	Harris Semiconductor	(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs	Scan	PDF
IRFD120	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD120	International Rectifier	Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)	Scan	PDF
IRFD120	International Rectifier	Plastic Package HEXFETs	Scan	PDF
IRFD120	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFD120	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFD120	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFD120	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 100V, 1.3A, Pkg style HEXDIP	Scan	PDF

IRFD120	Motorola	European Master Selection Guide 1986	Scan	PDF
IRFD120	Motorola	(IRFD123) TMOS Field Effect Transistor / Dual In-Line Package	Scan	PDF
IRFD120	Motorola	Switchmode Datasheet	Scan	PDF
IRFD120	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFD120	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFD120	Unknown	FET Data Book	Scan	PDF

IRFD12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Power MOSFET in a HEXDIP package Abstract: TA17401 IRFD120 TB334 Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	IRFD120 TB334 TA17401. Power MOSFET in a HEXDIP package TA17401 IRFD120 TB334	PDF
IRFD120PBF Abstract: IRFD120 Text: PD- 95928 IRFD120PbF Lead-Free www.irf.com 1 10/27/04 IRFD120PbF 2 www.irf.com IRFD120PbF www.irf.com 3 IRFD120PbF 4 www.irf.com IRFD120PbF www.irf.com 5 IRFD120PbF 6 www.irf.com IRFD120PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	IRFD120PbF IRFD120 IRFD120PBF IRFD120	PDF
Untitled Abstract: No abstract text available Text: IRFD122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ	Original	IRFD122	PDF
SiHFD123 Abstract: No abstract text available Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable	Original	IRFD123, SiHFD123 12-Mar-07	PDF
IRFD120 Abstract: No abstract text available Text: PD- 95927 IRFD110PbF Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	IRFD110PbF IRFD120 IRFD120	PDF
Untitled Abstract: No abstract text available Text: IRFD123_RC, SiHFD123_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFD123 SiHFD123 AN609, CONFIGURA5-Oct-10 3013m 6764u 6401m 9270m	PDF
Untitled Abstract: No abstract text available Text: IRFD123 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ	Original	IRFD123	PDF
IRFD120 Abstract: No abstract text available Text: IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable	Original	IRFD120, SiHFD120 18-Jul-08 IRFD120	PDF
F7101 Abstract: international rectifier code 807D1 IRF530S IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A Text: HD-1 HEXDIP THIS IS AN IRFD120 INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFD120 XXXX LAST FOUR DIGITS OF ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW = WEEK D 2 Pak (TO-263A) THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"	Original	IRFD120 O-263A) IRF530S MS-012AA) IRF7101 F7101 IRF7807D1 807D1 F7101 international rectifier code 807D1 IRF7101 IRF7807D1 IRFD120 MS-012AA 8024 digit 263A	PDF
IRFD120 Abstract: HexDIP Package HEXDIP Text: PD- 95920 IRFD014PbF Lead-Free 1 IRFD014PbF 2 IRFD014PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	IRFD014PbF IRFD120 IRFD120 HexDIP Package HEXDIP	PDF
IRFD120 Abstract: No abstract text available Text: PD- 95918 IRFD9220PbF Lead-Free 1 IRFD9220PbF 2 IRFD9220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	IRFD9220PbF IRFD120 IRFD120	PDF
90161 Abstract: No abstract text available Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable	Original	IRFD123, SiHFD123 2002/95/EC 11-Mar-11 90161	PDF
SiHFD123 Abstract: No abstract text available Text: IRFD123, SiHFD123 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.27 RoHS* Qg (Max.) (nC) 16 • For Automatic Insertion Qgs (nC) 4.4 • End Stackable	Original	IRFD123, SiHFD123 18-Jul-08	PDF
IRFD120 Abstract: No abstract text available Text: PD- 95919 IRFD9120PbF Lead-Free 1 IRFD9120PbF 2 IRFD9120PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	IRFD9120PbF IRFD120 IRFD120	PDF

385H Abstract: IRFD120 dual mosfet marking 506 Text: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =	OCR Scan	IRFD120 385H IRFD120 dual mosfet marking 506	PDF
IRF0110 Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310 Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123	OCR Scan	IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310	PDF
IRFD120 Abstract: irfd123 IRF0123 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 TMOS Field Effect Transistor Dual In-Line Package IR F D 1 2 3 N-Channel Enhancement Mode TM O S FET TR A N S IS TO R S FE T DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline	OCR Scan	IRFD120 IRFD123 IRFD123 IRF0123	PDF
1RFD123 Abstract: IRFD 123R fd120 IRFD 120 IRFD 123 Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*	OCR Scan	IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123	PDF
1RFD120 Abstract: TRANSISTOR IRFD120 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS	OCR Scan	IRFD120 IRFD123 1RFD120 1RFD120 TRANSISTOR IRFD120	PDF
IRFD123 Abstract: D120 IRFD120 if1070 IRFD 120 IRFD 123 Text: Tem ic IRFD120/123 Siliconix N-Channel Enhancement-Mode Transistors Product Summary Part Num ber V BR DSS 00 rDS(on) (Ö ) I d (A) IRFD120 100 0.3 1.3 IRFD123 60 0.4 1.1 D D Top View 6 s N-Channel M OSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	IRFD120/123 IRFD120 IRFD123 IK1D123 -55DC P-36852â 25C--7// D120 if1070 IRFD 120 IRFD 123	PDF
IRF0123 Abstract: IRFD122 IRFD123 Text: [F FIELD EFFECT POWER TRANSISTOR ]CZ T h is series of N -C h a n n e i E n h a n ce m e n t-m o d e Pow er M O S F E T s utilizes G E 's advanced Power D M O S technology to achieve low on-reslstance with excellent device rugged ness and reliability. IRFD122.123	OCR Scan	IRFD122 IRF0123 IRFD123	PDF
IRFD123 Abstract: IRF0123 100MS IRFD122 transistor 123 DL Text: r a ? M ^ D lM ! S @ F IE F IRFD122.123 RELD EFFECT POWER TRANSISTOR 1.1 AMPERES 100,60 VOLTS RPS ON = 0-4 A This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	100MS 100ms- IRFD12 IRFD123 IRF0123 100MS IRFD122 transistor 123 DL	PDF
irf0014 Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024 Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123	OCR Scan	QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024	PDF
Untitled Abstract: No abstract text available Text: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature	OCR Scan	0015GB2 IRFD120 5S452 QG15027	PDF

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IRFD12 Datasheets (79)

IRFD12 Datasheets Context Search

Power MOSFET in a HEXDIP package

IRFD120PBF

Untitled

SiHFD123

IRFD120

Untitled

Untitled

IRFD120

F7101

IRFD120

IRFD120

90161

SiHFD123

IRFD120

385H

IRF0110

IRFD120

1RFD123

1RFD120

IRFD123

IRF0123

IRFD123

irf0014

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