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    IRFN054 Price and Stock

    Infineon Technologies AG IRFN054

    Single N-Channel 60 V 150 W 160 nC Hexfet Power Mosfet Surface Mount - SMD-1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Future Electronics IRFN054 Bag 11
    • 1 $150.37
    • 10 $146.48
    • 100 $143.21
    • 1000 $143.21
    • 10000 $143.21
    Buy Now

    International Rectifier IRFN054

    45 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFN054 3
    • 1 $161.1113
    • 10 $161.1113
    • 100 $161.1113
    • 1000 $161.1113
    • 10000 $161.1113
    Buy Now

    IRFN054 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFN054 International Rectifier HEXFET Power Mosfet Original PDF
    IRFN054 International Rectifier HEXFET Power Mosfet Original PDF
    IRFN054 International Rectifier 60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN054 with Standard Packaging Original PDF
    IRFN054 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFN054 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFN054SMD Semelab N-CHANNEL POWER MOSFET Original PDF

    IRFN054 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE SMD 55a

    Abstract: ir mosfet smd package smd 2f IRFN054
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.


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    PDF IRFN054 DIODE SMD 55a ir mosfet smd package smd 2f IRFN054

    IRFN054SMD

    Abstract: No abstract text available
    Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


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    PDF IRFN054SMD 00A/ms 300ms, IRFN054SMD

    IRFN054

    Abstract: No abstract text available
    Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF 91543B IRFN054 IRFN054

    IRFN054

    Abstract: No abstract text available
    Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF PD-91543C IRFN054 IRFN054

    SHD219501

    Abstract: IRFN054
    Text: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.020 Ohm, 55A MOSFET œ Isolated Hermetic Ceramic Package œ Fast Switching œ Low RDS on œ Equivalent to IRFN054 MAXIMUM RATINGS


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    PDF SHD219501 IRFN054 SHD219501 IRFN054

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.020 Ohm, 55A MOSFET œ Isolated Hermetic Ceramic Package œ Fast Switching œ Low RDS on œ Equivalent to IRFN054 MAXIMUM RATINGS


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    PDF SHD219501 IRFN054 SHD219501

    4600 mosfet

    Abstract: MOSFET 20V 45A
    Text: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


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    PDF IRFN054 220SM 300ms, 4600 mosfet MOSFET 20V 45A

    Untitled

    Abstract: No abstract text available
    Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    PDF PD-91543C IRFN054

    Untitled

    Abstract: No abstract text available
    Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


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    PDF IRFN054SMD 00A/ms 300ms,

    IRFN054

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.


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    PDF IRFN054 IRFN054

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


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    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


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    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    smd diode S4 64a

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.


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    PDF IRFN054 5S452 GD24flSfl smd diode S4 64a

    Untitled

    Abstract: No abstract text available
    Text: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.


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    PDF IRFN054 O-220SM 00A/p 300ms,

    MNT-LB32N16-C4

    Abstract: T0254 sml1001r1avr SM5104
    Text: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250


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    PDF ei998 IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 MNT-LB32N16-C4 T0254 sml1001r1avr SM5104

    IRFG014

    Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
    Text: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150


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    PDF 00105b? IRFH150 1RFH250 IRFH350 IRFH450 T0-210AC IRFH9140 M0036AB IRFG014 IRFG110 smd 9410 s 9413 9410 N-channel

    Diode SMD ED 9C

    Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
    Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are


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    PDF I-445 Diode SMD ED 9C FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


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    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    MO-D36AB

    Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
    Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for


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    PDF MIL-S-19500 T0-254AA T0-204AA/AE MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542

    IRFJ140

    Abstract: IRLF110
    Text: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current


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    PDF IRLF110 IRLF120 IRLF130 O-205AF JO-39 IRFE130 IRFN054 IRFN150 IRFN250 IRFN350 IRFJ140

    n10 smd

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2


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    PDF IRFE024 IRFE110 IRFE120 IRFE130 IRFE210 IRFE220 IRFE230 IRFE310 IRFE320 IRFE330 n10 smd

    Untitled

    Abstract: No abstract text available
    Text: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number


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    PDF IRHM7250 IRHM3250 IRHM4250 IRHM8250 JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269 IRHM7260 IRHM8260

    IRF1644

    Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
    Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.


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    PDF 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003