IRFN9140
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1553 HEXFET POWER MOSFET IRFN9140 N-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN9140
IRFN9140
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isd 4020
Abstract: 2N7236U IRFN9140
Text: IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN9140
2N7236U
300ms,
isd 4020
2N7236U
IRFN9140
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Untitled
Abstract: No abstract text available
Text: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN9140SMD
IRFN914"
IRFN9140SMD
IRFN9140SMD-JQR-B
O276AB)
1400pF
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smd 2f
Abstract: IRFN9140
Text: Provisional Data Sheet No. PD-9.1553A HEXFET POWER MOSFET IRFN9140 P-CHANNEL Ω HEXFET -100 Volt, 0.20Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state
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IRFN9140
smd 2f
IRFN9140
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IRFN9140
Abstract: JANTX2N7236U JANTXV2N7236U
Text: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International
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91553D
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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2N7236U
Abstract: smd 2f IRFN9140 JANTX2N7236U JANTXV2N7236U
Text: PD-91553C IRFN9140 JANTX2N7236U JANTXV2N7236U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -100 Volt, 0.20Ω Product Summary ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91553C
IRFN9140
JANTX2N7236U
JANTXV2N7236U
MIL-PRF-19500/595]
2N7236U
smd 2f
IRFN9140
JANTX2N7236U
JANTXV2N7236U
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isd 4020
Abstract: 2N7236U IRFN9140
Text: IRFN9140 2N7236U MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN9140
2N7236U
300ms,
isd 4020
2N7236U
IRFN9140
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IRFN9140
Abstract: No abstract text available
Text: SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –100V –14A Ω 0.020Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN9140
220SM
300ms,
IRFN9140
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Untitled
Abstract: No abstract text available
Text: PD - 91553E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553E
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
IRFN9140
-100A/
-100V,
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Untitled
Abstract: No abstract text available
Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553F
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
-100V,
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IRFN9140SMD
Abstract: No abstract text available
Text: IRFN9140SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN9140SMD
00A/ms
300ms,
IRFN9140SMD
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IRFN9140
Abstract: JANS2N7236U JANTX2N7236U JANTXV2N7236U
Text: PD - 91553F POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9140 JANTX2N7236U JANTXV2N7236U JANS2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFN9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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91553F
IRFN9140
JANTX2N7236U
JANTXV2N7236U
JANS2N7236U
MIL-PRF-19500/595
-100A/
-100V,
IRFN9140
JANS2N7236U
JANTX2N7236U
JANTXV2N7236U
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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Untitled
Abstract: No abstract text available
Text: im iFFI mi SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 -100 V -14A 0.0200 V Dss 0.25 ^D(cont) 3.0 R DS(on) *iC •n*-1- FEATURES T • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN9140
O-220SM
300ms,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1553A International IS R Rectifier HEXFET POWER MOSFET IRFN9140 P-CHANNEL Product Summary -100 Volt, 0.20ÎÎ HEXFET H E X F E T technology is th e key to International Rectifier’s advanced line of power M O SFET transis
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IRFN9140
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11A3 ST
Abstract: diode 533 18A --/M/MARKING 11A3
Text: I p j j- 0 f p i Q Ü Q H Q I Provisional Data Sheet No. PD-9.1553 IO R Rectifier HEXFET POWER MOSFET IRFN9140 N-CH A NN EL Product Sum m an 1 -100 Volt, 0.20Q HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi
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smd U1p
Abstract: diode smd ed 49 Diode SMD ED 0B u1p smd
Text: Provisional Data Sheet No. PD-9.1553A International I«R Rectifier HEXFET POWER MOSFET IRFN9140 P -C H A N N E L Product Summary -100Volt,0.20£2 HEXFET H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis
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-100Volt
smd U1p
diode smd ed 49
Diode SMD ED 0B
u1p smd
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Untitled
Abstract: No abstract text available
Text: Mil W llll : SEME IRFN9140 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 2.0 3.5 -1 0 0 V 0.25 3.5 -1 4 A I D(cont) 3.0 0.020Q ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN9140
O-220SM
500mJ
Co-10V
300ms,
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Diode SMD ED 9C
Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are
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I-445
Diode SMD ED 9C
FN240
p-channel 250V 30A power mosfet
P-CHANNEL 400V 15A
i428
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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n10 smd
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2
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IRFE024
IRFE110
IRFE120
IRFE130
IRFE210
IRFE220
IRFE230
IRFE310
IRFE320
IRFE330
n10 smd
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