Abstract: IRFP353 irfip352 IRFP363 AA615
Text: FUT RELD EFFECT POWER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS RDS ON = 0.4 n This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged