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    IRFR 320 Search Results

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    IRFR 320 Price and Stock

    Vishay Siliconix IRFR320PBF

    MOSFET N-CH 400V 3.1A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR320PBF Tube 2,725 1
    • 1 $2.51
    • 10 $1.613
    • 100 $2.51
    • 1000 $0.8152
    • 10000 $0.71625
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    RS IRFR320PBF Bulk 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.86
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    New Advantage Corporation IRFR320PBF 1,875 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.6143
    • 10000 $0.5733
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    Vishay Siliconix IRFR320TRPBF-BE3

    N-CHANNEL 400V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR320TRPBF-BE3 Cut Tape 1,918 1
    • 1 $2.51
    • 10 $1.613
    • 100 $2.51
    • 1000 $0.8152
    • 10000 $0.8152
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    IRFR320TRPBF-BE3 Digi-Reel 1,918 1
    • 1 $2.51
    • 10 $1.613
    • 100 $2.51
    • 1000 $0.8152
    • 10000 $0.8152
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    IRFR320TRPBF-BE3 Reel 2,000
    • 1 -
    • 10 -
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    • 10000 $0.71625
    		Buy Now

    Vishay Siliconix IRFR320

    MOSFET N-CH 400V 3.1A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR320 Tube 3,000
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    • 100 -
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    • 10000 $1.7
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    Bristol Electronics IRFR320 150
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    Vishay Siliconix IRFR320TR

    MOSFET N-CH 400V 3.1A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR320TR Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.7
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    Vishay Siliconix IRFR320TRL

    MOSFET N-CH 400V 3.1A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR320TRL Reel 3,000
    • 1 -
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    Find more IRFR 320 price and stock on Findchips.com

    IRFR 320 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR320 Harris Semiconductor Power MOSFET Product Matrix Original PDF
    IRFR320 Intersil 3.1A, 400V, 1.800 ?, N-Channel Power MOSFETs Original PDF
    IRFR320 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR320 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 3.1A DPAK Original PDF
    IRFR320 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR320 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR320 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR320 International Rectifier Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A) Scan PDF
    IRFR320 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFR320 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, 3.1A, Pkg Style TO-252AA Scan PDF
    IRFR320 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR320 Unknown FET Data Book Scan PDF
    IRFR320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR3209A Fairchild Semiconductor 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs Original PDF
    IRFR3209A Fairchild Semiconductor 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFET Original PDF
    IRFR3209A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR320A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFR320A Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRFR 320 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U9310PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original     		IRFR/U9310PbF IRFU120 O-252AA) EIA-481 EIA-541. EIA-481. PDF

    AN-994

    Abstract: IRFR120 IRFR1205 IRFU120 IRFU1205 IRFR 320 IRFU 310
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1318 IRFR/U1205 HEXFET Power MOSFET VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated


    Original     		IRFR/U1205 IRFR1205) IRFU1205) O-252AA AN-994 IRFR120 IRFR1205 IRFU120 IRFU1205 IRFR 320 IRFU 310 PDF

    AN-994

    Abstract: IRFR120 IRFR1205 IRFU120 IRFU1205
    Text: PRELIMINARY DATASHEET PD - 9.1318 IRFR/U1205 HEXFET Power MOSFET VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) 150°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 0.027Ω ID = 37A Description


    Original     		IRFR/U1205 IRFR1205) IRFU1205) O-252AA AN-994 IRFR120 IRFR1205 IRFU120 IRFU1205 PDF

    400v 50A DIODE

    Abstract: IRFU120
    Text: IRFR/U430APbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		IRFR/U430APbF O-251AA) IRFU120 400v 50A DIODE IRFU120 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRFR/U9310 IRFR9310) IRFU9310) -400V 08-Mar-07 PDF

    IRFR9310

    Abstract: IRFU9310
    Text: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRFR/U9310 IRFR9310) IRFU9310) -400V IRFR9310 IRFU9310 PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U330A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U330A PDF

    IR*9310

    Abstract: IRFR9310 IRFU9310
    Text: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier


    Original     		IRFR/U9310 IRFR9310) IRFU9310) -400V 12-Mar-07 IR*9310 IRFR9310 IRFU9310 PDF

    IRFZ44N APPLICATION NOTE

    Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		91318B IRFR/U1205 IRFR1205) IRFU1205) IRFZ44N APPLICATION NOTE IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 IRFZ44N 12v input 55v output using irfz44n circuit PDF

    IRFZ44N

    Abstract: IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		91318B IRFR/U1205 IRFR1205) IRFU1205) IRFZ44N IRFR1205 equivalent AN-994 IRFR1205 IRFU1205 surface mount IRFZ44N irfru1205 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91318B IRFR/U1205 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR1205 Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G Description The D-PAK is designed for surface mounting using


    Original     		91318B IRFR/U1205 IRFR1205) IRFU1205) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 3.6 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 1.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V


    Original     		IRFR/U310A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U320A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U320A PDF

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR/U310A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 1.7 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		IRFR/U310A PDF

    VM-50V

    Abstract: No abstract text available
    Text: IRFR/U320A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |JA Max. @ VOS= 400V


    OCR Scan     		IRFR/U320A VM-50V PDF

    S250N

    Abstract: No abstract text available
    Text: IRFR/Ü310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 }JA M ax. @ VOS= 400V ■ Low R ^ on) : 2.815 £2 (Typ.)


    OCR Scan     		IRFR/U310A S250N PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U330A Advanced Power MOSFET FEATURES 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower ROS(ON) . 0.765 12 (Typ.)


    OCR Scan     		IRFR/U330A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U320A A d van ced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VOS = 400V


    OCR Scan     		IRFR/U320A IRFR/U32 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B ^ dss - 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ V,*, = 400V


    OCR Scan     		IRFR/U310A 100lC) PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 -7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -P A K


    OCR Scan     		IRFR/U310A PDF

    IBJT VDS 400V

    Abstract: IBJT IBJT VDS 400V, 10A 2a 400v mosfet irfr 20
    Text: IRFR/U310A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 3 .6 Î2 1.7 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D -PA K ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		IRFR/U310A IBJT VDS 400V IBJT IBJT VDS 400V, 10A 2a 400v mosfet irfr 20 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U320A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD "I - 8 ^ 3.1 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		IRFR/U320A PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 400 V ^ D S o n = 3 . 6 £2 1 -7 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |^A (Max.) @ V DS = 400V


    OCR Scan     		IRFR/U310A PDF

    Fet irfz44n

    Abstract: No abstract text available
    Text: PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IRFR 1205 Straight Lead (IRFU 1205) Fast Switching Fully Avalanche Rated Vdss = 55V RüS(on) = 0.027Q |D = 44 A Description


    OCR Scan     		91318B Fet irfz44n PDF