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    IRFR21 Search Results

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    IRFR21 Price and Stock

    Vishay Siliconix IRFR210PBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210PBF Tube 13,314 1
    • 1 $1.37
    • 10 $1.37
    • 100 $0.60987
    • 1000 $0.45617
    • 10000 $0.42363
    		Buy Now

    Vishay Siliconix IRFR210TRPBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRPBF Cut Tape 7,958 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRPBF Digi-Reel 7,958 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRPBF Reel 6,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.42363
    		Buy Now
    RS IRFR210TRPBF Bulk 10
    • 1 -
    • 10 $0.76
    • 100 $0.73
    • 1000 $0.65
    • 10000 $0.65
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    New Advantage Corporation IRFR210TRPBF 4,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.48
    		Buy Now

    Vishay Siliconix IRFR210TRPBF-BE3

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRPBF-BE3 Cut Tape 7,885 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRPBF-BE3 Digi-Reel 7,885 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRPBF-BE3 Reel 6,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.42363
    		Buy Now

    Vishay Siliconix IRFR210TRLPBF

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210TRLPBF Cut Tape 4,671 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRLPBF Digi-Reel 4,671 1
    • 1 $1.71
    • 10 $1.086
    • 100 $1.71
    • 1000 $0.52451
    • 10000 $0.52451
    		Buy Now
    IRFR210TRLPBF Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.46169
    		Buy Now

    Vishay Siliconix IRFR210PBF-BE3

    MOSFET N-CH 200V 2.6A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR210PBF-BE3 Tube 2,984 1
    • 1 $1.71
    • 10 $1.71
    • 100 $0.76227
    • 1000 $0.57023
    • 10000 $0.43765
    		Buy Now
    Find more IRFR21 price and stock on Findchips.com

    IRFR21 Datasheets (88)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR210 International Rectifier Power MOSFET Original PDF
    IRFR210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A DPAK Original PDF
    IRFR210 International Rectifier N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm Scan PDF
    IRFR210 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFR210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR210 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR210 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFR210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 2.6A, Pkg Style TO-252AA Scan PDF
    IRFR210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR210 Unknown FET Data Book Scan PDF
    IRFR210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR210 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR210 Samsung Electronics N-Channel Power MOSFET Scan PDF
    IRFR210 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFR210A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFR210A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR210A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR210B Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFR210B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF

    IRFR21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-541

    Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
    Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF


    Original     		PDF 5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 rectifier diode assembly irf p channel

    IRFU210

    Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8


    Original     		PDF IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B

    irfu9210

    Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 irfu214 IRFR214 SiHFR214-E3

    Device Code SE

    Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
    Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit


    Original     		PDF 5068A IRFR210PbF IRFU210PbF IRFR/U210PbF Wavefor10PbF Device Code SE EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL

    irfu9210

    Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 IRFR214 IRFU214 SiHFR214-E3

    irfr214

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 12-Mar-07 irfr214

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384 IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


    Original     		PDF IRFR214PbF IRFU214PbF IRFR/U214PbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.2 I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)100# IDM Max (@25øC Amb)8.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFR214

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B

    Untitled

    Abstract: No abstract text available
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)


    Original     		PDF IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)

    IRFR210

    Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210
    Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8


    Original     		PDF IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR214 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRFR214

    IRFR210B

    Abstract: IRFU210B
    Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR210B IRFU210B IRFU210B

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR214

    AN-994

    Abstract: IRFR210 IRFU210
    Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRFR210 IRFR210) IRFU210) AN-994 IRFR210 IRFU210

    irfb220

    Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
    Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC O-251AA IRFR9222 O-243AA IRFU010 irfb220 TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251

    1RFR214

    Abstract: 25C2 AN-994 IRFR214 IRFU214
    Text: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß


    OCR Scan     		PDF IRFR214 IRFR214) IRFU214) i50Kn lntGIT13tà 1RFR214 25C2 AN-994 IRFR214 IRFU214

    u210

    Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211
    Text: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFR210/211 IRFU210/211 IRFR210/U210 IRFR211/U211 7clb414E 00Eflb3Q u210 xrd6 irfr210 N-Channel Power MOSFETs IRFR211

    IRFR210

    Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
    Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET


    OCR Scan     		PDF t-35-25 IRFU210 IRFR210, IRFR212, IRFU210, IRFU212 IRFR210TR IRFR210 IRFR212 IRFU210 UJ31 irfh212 k 3525 MOSFET