IRFR214 Search Results

IRFR214B

Abstract: IRFU214B
Contextual Info: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V

irfu9210

Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214
Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)

irfu9210

Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3
Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)

irfr214

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)

Contextual Info: PD- 95384 IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: IRFR214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V) I(D) Max. (A)2.2 I(DM) Max. (A) Pulsed I(D)1.4 @Temp (øC)100# IDM Max (@25øC Amb)8.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55õ

Contextual Info: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

1RFR214

Abstract: 25C2 AN-994 IRFR214 IRFU214
Contextual Info: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR214 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

Contextual Info: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)

U120

Abstract: EIA-541 IRFR120 IRFU120
Contextual Info: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF

IRFR214

Abstract: IRFU214 TB334
Contextual Info: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are

Contextual Info: IRFR214, IRFU214 S e m iconductor Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are

Contextual Info: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF

SIHFR214TR

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 12/3/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline

4562 mosfet

Abstract: 4563 mosfet
Contextual Info: IRFR214 IRFU214 çm H A R R IS S E M I C O N D U C T O R N-Channel Power MOSFETs Avalanche Energy Rated M arch 1994 Package Features TO-251AA TOP VIEW • 2.2A, 250V • r DS on = 2 -0 £ î ’ SOURCE • Single Puise Avalanche Energy Rated DRAIN TAB • SOA Is Power-Disslpation Limited

Contextual Info: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching