IRFW730S
Abstract: ET-24
Text: $GYDQFHG 3RZHU 026 7 IRFW730S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFW730S
IRFW730S
ET-24
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Untitled
Abstract: No abstract text available
Text: IRFW730S A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology cn cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 1.0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW730S
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Untitled
Abstract: No abstract text available
Text: IRFW730S A d van ced Power MOSFET FEATURES BV DSS - ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance cn cn ^D S o n = ♦ Rugged Gate Oxide Technology 400 V 1 .Oil A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRFW730S
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IRFW730S
Abstract: No abstract text available
Text: IRFW730S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .0 Î 2 5 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRFW730S
IRFW730S
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IRFW730S
Abstract: 07652
Text: IRFW730S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .0 Î 2 5 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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PDF
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IRFW730S
IRFW730S
07652
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