Untitled
Abstract: No abstract text available
Text: IRFW740S A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K
|
OCR Scan
|
IRFW740S
|
PDF
|
IRFW740S
Abstract: 911 DIODE
Text: IRFW740S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K
|
OCR Scan
|
IRFW740S
IRFW740S
911 DIODE
|
PDF
|
c125 diode
Abstract: No abstract text available
Text: IRFW740S A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
|
OCR Scan
|
IRFW740S
c125 diode
|
PDF
|
IRFW740S
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW740S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
|
Original
|
IRFW740S
IRFW740S
|
PDF
|
IRFW740S
Abstract: No abstract text available
Text: IRFW740S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -5 5 ÌÌ 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K
|
OCR Scan
|
IRFW740S
IRFW740S
|
PDF
|
