shd226302
Abstract: IRFY130M
Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY130M
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SHD226302
SHD22632
IRFY130M
250mA
shd226302
IRFY130M
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IRFY130M
Abstract: No abstract text available
Text: IRFY130M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 14.4A RDS(ON) = 0.18Ω Ω 1.0 (0.039)
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IRFY130M
O257AB
O257AB
O220M)
13-Sep-02
IRFY130M
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Untitled
Abstract: No abstract text available
Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International
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O-257AA)
IRFY130
IRFY130M
IRFY130
IRFY130,
O-257AA
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY130M
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SHD22632
SHD226302
IRFY130M
SHD226302
O-257
O-257
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IRFY130M
Abstract: SHD226302
Text: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .19 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Equivalent to IRFY130M
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SHD226302
SHD22632
IRFY130M
IRFY130M
SHD226302
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irf 44 n
Abstract: IRFY130 IRFY130C IRFY130CM IRFY130M 144A
Text: PD - 94183 POWER MOSFET THRU-HOLE TO-257AA IRFY130,IRFY130M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY130 0.18 Ω 14.4A Glass IRFY130M 0.18 Ω 14.4A Glass HEXFET® MOSFET technology is the key to International
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O-257AA)
IRFY130
IRFY130M
IRFY130
IRFY130,
O-257AA
irf 44 n
IRFY130C
IRFY130CM
IRFY130M
144A
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Untitled
Abstract: No abstract text available
Text: IRFY130M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)10.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)43.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC)
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IRFY130M
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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fet 500v 10A
Abstract: 130NC IRFM044
Text: Search Results Part number search for devices beginning "IRFM360" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRFM360 N-Channel TO254 400V 23A
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IRFM360"
IRFM360
IRFM360-JQR-B
4200pF
140nC
140nC
IRFM044"
IRFM044
IRFM044-JQR-B
fet 500v 10A
130NC
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IRLF110
Abstract: SMD H21 IRFJ130 IRFJ120 IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 IRLF120
Text: . INTERN ATION AL R ECT IFIER 2bE Government/ Space Products D 4055452 GG 10 1 Ô S T-3Ÿ-0/ 7 • International SâHRectifier Power M O S F E T S High Reliability Logic Level — N-Channel Vos Drain Part Number IRLF110 IRLF120 IRLF130 Source Voltage Alts
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OCR Scan
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GG101Ã
IRLF110
IRLF120
IRLF130
O-205AF
IRFN054
IRFN150
IRFN250
IRFN350
IRFN450
SMD H21
IRFJ130
IRFJ120
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