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    IRFY240 Price and Stock

    International Rectifier IRFY240C

    Trans MOSFET N-CH 200V 16A 3-Pin(3+Tab) TO-257AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFY240C 1,810 1
    • 1 $248.308
    • 10 $248.308
    • 100 $248.308
    • 1000 $248.308
    • 10000 $248.308
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    NexGen Digital IRFY240C 50
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    International Rectifier IRFY240CM

    Trans MOSFET N-CH 200V 16A 3-Pin(3+Tab) TO-257AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFY240CM 1,600 1
    • 1 $262.6715
    • 10 $261.0845
    • 100 $255.576
    • 1000 $255.576
    • 10000 $255.576
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    Bristol Electronics IRFY240CM 10
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    NexGen Digital IRFY240CM 700
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    Infineon Technologies AG IRFY240C

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop IRFY240C 1,810
    • 1 $248.308
    • 10 $248.308
    • 100 $248.308
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    Infineon Technologies AG IRFY240CM

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop IRFY240CM 1,600
    • 1 $262.6715
    • 10 $261.0845
    • 100 $255.576
    • 1000 $255.576
    • 10000 $255.576
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    Cypress Semiconductor IRFY240C

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    Flip Electronics IRFY240C 2,500
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    IRFY240 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFY240 International Rectifier 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY240 Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY240 International Rectifier HEXFET Transistors Scan PDF
    IRFY240 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY240 New England Semiconductor TRANS MOSFET N-CH 200V 12A 3TO-257 Scan PDF
    IRFY240C International Rectifier 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY240C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY240C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY240CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY240CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY240CM International Rectifier Power MOSFET Original PDF
    IRFY240CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY240M International Rectifier 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY240M Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY240M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY240M International Rectifier HEXFET Transistors Scan PDF

    IRFY240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFY240M

    Abstract: No abstract text available
    Text: IRFY240M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)


    Original     		PDF IRFY240M O257AB O257AB O220M) 13-Sep-02 IRFY240M

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS


    Original     		PDF SHD219403 IRFY240 SHD219403

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFY240 IRFY240M O-257AB 330mJ O220M O-257AB) IRFY240

    IRFY240

    Abstract: No abstract text available
    Text: IRFY240 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 200V 12A Ω 0.19Ω FEATURES 0.89


    Original     		PDF IRFY240 IRFY240

    IRFY240C

    Abstract: IRFY240CM
    Text: Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1289B IRFY240CM IRFY240C IRFY240CM

    MOSFET 7311

    Abstract: IRFY240C
    Text: IRFY240C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY240C O257AA MOSFET 7311 IRFY240C

    Untitled

    Abstract: No abstract text available
    Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500

    Untitled

    Abstract: No abstract text available
    Text: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY240 IRFY240M IRFY240 IRFY240, O-257AA

    9522 transistor

    Abstract: 9522
    Text: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFY240 IRFY240M O-257AB O220M O-257AB) IRFY240M 9522 transistor 9522

    IRFY240C

    Abstract: semelab mosfet
    Text: IRFY240C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)


    Original     		PDF IRFY240C O257AB O257AB O220M) 13-Sep-02 IRFY240C semelab mosfet

    IRFY240C

    Abstract: HEXFET pinout IRFY240CM
    Text: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International


    Original     		PDF PD-91289E O-257AA) IRFY240C IRFY240CM IRFY240C O-257AA O-257AA. MIL-PRF-19500 HEXFET pinout IRFY240CM

    IRFY240

    Abstract: SHD219403
    Text: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS


    Original     		PDF SHD219403 IRFY240 IRFY240 SHD219403

    IRFY240C

    Abstract: IRFY240CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1289B IRFY240CM IRFY240C IRFY240CM

    IRFY240

    Abstract: IRFY240C IRFY240CM IRFY240M
    Text: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY240 IRFY240M IRFY240 IRFY240, O-257AA IRFY240C IRFY240CM IRFY240M

    9522 transistor

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY240 • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFY240 O-257AB O220M O-257AB) 9522 transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 91289D POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number ID Eyelets IRFY240C RDS(on) 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91289D O-257AA) IRFY240C IRFY240CM IRFY240CM cho16 5M-1994. O-257AA.

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    shd2263

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226403 SHD226403R TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on


    Original     		PDF SHD2263 SHD226403 SHD226403R IRFY240 CHARAC403 SHD226403R O-257 shd2263

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    br 003 m 527

    Abstract: IRFY240 K120
    Text: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage


    OCR Scan     		PDF IRFY240 O-257 00A/pS, br 003 m 527 IRFY240 K120

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


    OCR Scan     		PDF IRFY240

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034