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    IRFZ14 Search Results

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    IRFZ14 Price and Stock

    Vishay Siliconix IRFZ14PBF

    MOSFET N-CH 60V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFZ14PBF Tube 51,165 1
    • 1 $1.17
    • 10 $1.17
    • 100 $1.17
    • 1000 $0.46412
    • 10000 $0.46412
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    RS IRFZ14PBF Bulk 1,000
    • 1 -
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    • 100 -
    • 1000 $1.04
    • 10000 $0.99
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    New Advantage Corporation IRFZ14PBF 800 1
    • 1 -
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    • 1000 $0.5
    • 10000 $0.5
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    Vishay Siliconix IRFZ14PBF-BE3

    MOSFET N-CH 60V 10A TO220AB
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    DigiKey IRFZ14PBF-BE3 Tube 1,823 1
    • 1 $1.47
    • 10 $1.47
    • 100 $1.47
    • 1000 $0.51916
    • 10000 $0.46412
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    Vishay Siliconix IRFZ14SPBF

    MOSFET N-CH 60V 10A D2PAK
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    DigiKey IRFZ14SPBF Tube 80 1
    • 1 $1.67
    • 10 $1.128
    • 100 $1.67
    • 1000 $0.59897
    • 10000 $0.54875
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    Bristol Electronics IRFZ14SPBF 150
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    Quest Components IRFZ14SPBF 120
    • 1 $2
    • 10 $2
    • 100 $1
    • 1000 $1
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    IRFZ14SPBF 9
    • 1 $1.2
    • 10 $1
    • 100 $1
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    Vishay Siliconix IRFZ14

    MOSFET N-CH 60V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFZ14 Tube
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    Quest Components IRFZ14 166
    • 1 $3.33
    • 10 $3.33
    • 100 $1.665
    • 1000 $1.443
    • 10000 $1.443
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    Vishay Siliconix IRFZ14L

    MOSFET N-CH 60V 10A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFZ14L Tube
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    IRFZ14 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFZ14 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ14 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original PDF
    IRFZ14 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFZ14 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFZ14 International Rectifier N-CHANNEL HEXFET Power MOSFET Scan PDF
    IRFZ14 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRFZ14 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFZ14 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFZ14 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFZ14 Unknown N-Channel Enhancement MOSFET Scan PDF
    IRFZ14 Unknown FET Data Book Scan PDF
    IRFZ14A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFZ14A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFZ14A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFZ14L International Rectifier HEXFET POWER MOSFET Original PDF
    IRFZ14L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-262 Original PDF
    IRFZ14L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFZ14PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 10A TO-220AB Original PDF
    IRFZ14PBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Scan PDF
    IRFZ14PBF-BE3 Vishay Siliconix MOSFET N-CH 60V 10A TO220AB Original PDF

    IRFZ14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF IRFZ14 SiHFZ14 AN609, CONFIGURATI8-Aug-10 7073m 5021m 4092u 3752m

    IRFZ14L

    Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L-E3 SiHFZ14S-E3 SiHFZ14STL

    IRFZ14PBF

    Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 O-220 O-220 18-Jul-08 IRFZ14PBF IRFZ14 SiHFZ14-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    94959

    Abstract: No abstract text available
    Text: PD - 94959 IRFZ14PbF • Lead-Free www.irf.com 1 01/29/04 IRFZ14PbF 2 www.irf.com IRFZ14PbF www.irf.com 3 IRFZ14PbF 4 www.irf.com IRFZ14PbF www.irf.com 5 IRFZ14PbF 6 www.irf.com IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


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    PDF IRFZ14PbF O-220AB O-220AB. 94959

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


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    PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S-L_RC, SiHFZ14S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF IRFZ14S-L SiHFZ14S-L AN609, 5914m 0559m 6073u 3031m 5735m

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    IRFZ14

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 O-220 12-Mar-07 IRFZ14

    IRFZ14A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFZ14A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature


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    PDF IRFZ14A O-220 IRFZ14A

    AN-994

    Abstract: IRFZ14 IRFZ14L IRFZ14S
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S

    IRFZ14

    Abstract: SiHFZ14 SiHFZ14-E3 D. S. /N. 1677
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 2002/95/EC O-220 O-220 18-Jul-08 IRFZ14 SiHFZ14-E3 D. S. /N. 1677

    Untitled

    Abstract: No abstract text available
    Text: PD - 94959 IRFZ14PbF • Lead-Free Document Number: 91289 01/29/04 www.vishay.com 1 IRFZ14PbF Document Number: 91289 www.vishay.com 2 IRFZ14PbF Document Number: 91289 www.vishay.com 3 IRFZ14PbF Document Number: 91289 www.vishay.com 4 IRFZ14PbF Document Number: 91289


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    PDF IRFZ14PbF O-220AB 08-Mar-07

    AN-994

    Abstract: IRFZ14 IRFZ14L IRFZ14S
    Text: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier


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    PDF IRFZ14S/L IRFZ14S) IRFZ14L) AN-994 IRFZ14 IRFZ14L IRFZ14S

    IRFZ14

    Abstract: SiHFZ14 SiHFZ14-E3
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


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    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFZ14 SiHFZ14-E3

    IRFZ14L

    Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S IRFZ14STRL SiHFZ14STL SiHFZ44L

    SiHFZ44L

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 18-Jul-08 SiHFZ44L

    irfz12

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    PDF IRFZ14/15 IRFZ10/12 IRFZ10 IRFZ14 IRFZ12 IRFZ15 irfz12

    c416 diode

    Abstract: IRFZ15 IRFZ14 C419
    Text: HE D I MAS54S5 üOGÔbkM T | Data Sheet No. PD-9.507A IN TERNATI ONAL RE C TI FI ER T -3 t - it INTERNATIONAL RECTIFIER T O R AVALANCHE AND dv/dt RATED* 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFZ14 IRFZ15 :r N-CHANNEL Product Summary 60 Volt, 0.20 Ohm HEXFET


    OCR Scan
    PDF MAS54S5 IRFZ14 IRFZ15 C-419 IRFZ14, IRFZ15 C-420 c416 diode C419

    IRFZ14

    Abstract: IRFZ12 IRFZ10 IRFZ15
    Text: IRFZ14/15 IRFZ10/12 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF IRFZ14/15 IRFZ10/12 O-220 IRFZ10/12 IRFZ14/1 IRFZ10 IRFZ12 IRFZ14 IRFZ15

    irfz14

    Abstract: No abstract text available
    Text: IRFZ14 A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ 175°C Operating Temperature


    OCR Scan
    PDF IRFZ14 irfz14

    IRFZ14

    Abstract: 1A N MOSFET T0-220
    Text: PD-9.507B International S Rectifier IRFZ14 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - V R DS on = 0 . 2 0 Q lD = 1 0 A Description


    OCR Scan
    PDF IRFZ14 T0-220 lfltGIT13tà IRFZ14 1A N MOSFET T0-220

    IRFZ14n

    Abstract: IRFZ14 L548 MU55 international rectifier hr
    Text: In te rn a tio n a l lO R R e c tifie r HEXFET Power MOSFET • • • • • 4 Ö5 5 M5 2 0015754 ObD * I N R PD-9.507B IRFZ14 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    PDF 55M52 IRFZ14 0-20Q O-220 T0-220 IRFZ14n IRFZ14 L548 MU55 international rectifier hr