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    IRG4BC20K Search Results

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    IRG4BC20K Price and Stock

    Infineon Technologies AG IRG4BC20K

    IGBT 600V 16A 60W TO220AB
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    DigiKey IRG4BC20K Tube 50
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    Infineon Technologies AG IRG4BC20KD

    IGBT 600V 16A 60W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20KD Tube 250
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    Infineon Technologies AG IRG4BC20KD-S

    IGBT 600V 16A 60W D2PAK
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    DigiKey IRG4BC20KD-S Tube 50
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    • 100 $3.3482
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    Infineon Technologies AG IRG4BC20KPBF

    IGBT 600V 16A 60W TO220AB
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    Infineon Technologies AG IRG4BC20KDPBF

    IGBT 600V 16A 60W TO220AB
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    RS IRG4BC20KDPBF Bulk 1
    • 1 $1.68
    • 10 $1.6
    • 100 $1.43
    • 1000 $1.43
    • 10000 $1.43
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    IRG4BC20K Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC20K International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC20K International Rectifier 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20K with Standard Packaging Original PDF
    IRG4BC20K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4BC20KD International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC20KD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20KD International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; A IRG4BC20KD with Standard Packaging Original PDF
    IRG4BC20KD International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Insulated Gate, Bipolar, 600V, 16A, TO-220 CoPack Scan PDF
    IRG4BC20KDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3TO-220AB Original PDF
    IRG4BC20KDPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20KD with Lead Free Packaging Original PDF
    IRG4BC20KDS International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, Original PDF
    IRG4BC20KD-S International Rectifier Short Circuit Rated UltraFast IGBT Original PDF
    IRG4BC20KD-S International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20KD-S International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC20KD-S with Standard Packaging Original PDF
    IRG4BC20KD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2PAK Original PDF
    IRG4BC20KD-SPBF International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; Similar to IRG4BC20KD-S with Lead Free Packaging Original PDF
    IRG4BC20KD-STRL International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC20KD-S with Tape and Reel Left Packaging Original PDF
    IRG4BC20KD-STRL International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4BC20KDSTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK Original PDF
    IRG4BC20KD-STRLPBF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK T/R Original PDF
    IRG4BC20KD-STRR International Rectifier 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package; A IRG4BC20KD-S with Tape and Reel Right Packaging Original PDF

    IRG4BC20K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4BC20

    Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
    Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF -91599A IRG4BC20KD O-220AB IRG4BC20 IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001

    IRGBC20K-S

    Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
    Text: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF 1620A IRG4BC20K-S IRGBC20K-S IRGBC20M-S AN-994 IRG4BC20K-S

    AN-994

    Abstract: IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4BC20KD-SPbF EIA-418. AN-994 IRGBC20KD2-S IRGBC20MD2-S

    Untitled

    Abstract: No abstract text available
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4BC20KD-SPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF IRG4BC20KDPbF O-220AB

    AN-994

    Abstract: IRGBC20K-S IRGBC20M-S
    Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter


    Original
    PDF IRG4BC20K-SPbF IRGBC20 EIA-418. AN-994 IRGBC20K-S IRGBC20M-S

    AN-994

    Abstract: IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original
    PDF IRG4BC20KD-SPbF EIA-418. AN-994 IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge

    IRGBC20K

    Abstract: IRGBC20M
    Text: PD - 95638 IRG4BC20KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF IRG4BC20KPbF IRGBC20K IRGBC20M

    motor IG 2200 19 X 000 15 R

    Abstract: motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V
    Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF -91598A IRG4BC20KD-S motor IG 2200 19 X 000 15 R motor IG 2200 53 X 000 41 R ic c 838 IRG4BC20KD IRG4BC20KD-S AN-994 IRGBC20KD2-S IRGBC20MD2-S motor IG 2200 19 00001 227V

    AN-994

    Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -91598A IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF -91598A IRG4BC20KD-S AN-994 IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S

    AN-994

    Abstract: IRGBC20K-S IRGBC20M-S
    Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter


    Original
    PDF IRG4BC20K-SPbF IRGBC20( EIA-418. AN-994 IRGBC20K-S IRGBC20M-S

    IGBT IRG4BC20KD

    Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 IRG4BC20K
    Text: PD -9.1599 IRG4BC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF IRG4BC20KD O-220AB IGBT IRG4BC20KD IRG4BC20KD IRGBC20KD2 IRGBC20MD2 IRG4BC20K

    IRG4BC20KD

    Abstract: 22 49 941 m 60 n 03 g10
    Text: IRG4BC20KD-S Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature figure 20 ‚ VCC=80%(VCES), V GE=20V, L=10µH, RG= 50Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot.


    Original
    PDF IRG4BC20KD-S AN-994. IRG4BC20KD 22 49 941 m 60 n 03 g10

    IRG4BC20K

    Abstract: IRGBC20K IRGBC20M
    Text: PD - 91600A IRG4BC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF 1600A IRG4BC20K IRG4BC20K IRGBC20K IRGBC20M

    AN-994

    Abstract: IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -9.1598 PRELIMINARY IRG4BC20KD-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original
    PDF IRG4BC20KD-S AN-994 IRG4BC20KD-S IRGBC20KD2-S IRGBC20MD2-S

    AN-994

    Abstract: IRG4BC20K-S IRGBC20K-S IRGBC20M-S
    Text: PD - 9.1620 PRELIMINARY IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF IRG4BC20K-S AN-994 IRG4BC20K-S IRGBC20K-S IRGBC20M-S

    motor IG 2200 53 X 000 41 R

    Abstract: AN-994 IRG4BC20K-S IRGBC20K-S IRGBC20M-S irgbc20 91620A
    Text: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF 1620A IRG4BC20K-S motor IG 2200 53 X 000 41 R AN-994 IRG4BC20K-S IRGBC20K-S IRGBC20M-S irgbc20 91620A

    IRG4BC20K

    Abstract: IRGBC20K IRGBC20M
    Text: PD - 91600A IRG4BC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original
    PDF 1600A IRG4BC20K IRG4BC20K IRGBC20K IRGBC20M

    om 961

    Abstract: No abstract text available
    Text: IRG4BC20KD-S Vg G AT E SI GN A L D E VI C E U N D E R TE S T C U R R E N T D .U .T . V OL TA G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. RL= Vc* 480V 4 X IC @25°C 0 - 480V 50V 6000µF


    Original
    PDF

    transistor iqr

    Abstract: No abstract text available
    Text: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V


    OCR Scan
    PDF IRG4BC20K transistor iqr

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short


    OCR Scan
    PDF IRG4BC20KD T0-220AB

    Untitled

    Abstract: No abstract text available
    Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short


    OCR Scan
    PDF IRG4BC20KD-S 5SM52

    IRG4BC20KD

    Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
    Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short


    OCR Scan
    PDF IRG4BC20KD T0220A8 IRG4BC20KD IGBT IRG4BC20KD IRGBC20KD2 transistor iqr

    RTO BH

    Abstract: No abstract text available
    Text: PD - 9 .1 6 2 0 International I R Rectifier PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20K-S Short Circuit Rated _ UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10ps, @ 3 60 V VCE start , T j = 125°C,


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    PDF IRG4BC20K-S RTO BH