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    IRG4IBC30S Price and Stock

    Infineon Technologies AG IRG4IBC30S

    IGBT 600V 23.5A 45W TO220FP
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    DigiKey IRG4IBC30S Tube 150
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    • 1000 $2.6196
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    Rochester Electronics LLC IRG4IBC30SPBF

    IGBT 600V 23.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4IBC30SPBF Bulk 210
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    • 1000 $1.44
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    Infineon Technologies AG IRG4IBC30SPBF

    IGBT 600V 23.5A 45W TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4IBC30SPBF Tube
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    RS IRG4IBC30SPBF Bulk 2
    • 1 -
    • 10 $2.75
    • 100 $2.75
    • 1000 $2.75
    • 10000 $2.75
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    Rochester Electronics IRG4IBC30SPBF 9,651 1
    • 1 $1.38
    • 10 $1.38
    • 100 $1.3
    • 1000 $1.17
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    Flip Electronics IRG4IBC30SPBF 715
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    International Rectifier IRG4IBC30SPBF

    INSULATED GATE BIPOLAR TRANSISTOR, 23.5A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRG4IBC30SPBF 47
    • 1 $2.3063
    • 10 $2.3063
    • 100 $1.3838
    • 1000 $1.3838
    • 10000 $1.3838
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    IRG4IBC30S Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4IBC30S International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220 FullPak package; A IRG4IBC30S with Standard Packaging Original PDF
    IRG4IBC30S International Rectifier IGBT Original PDF
    IRG4IBC30SPBF International Rectifier Original PDF
    IRG4IBC30SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220 FullPak package; Similar to IRG4IBC30S with Lead Free Packaging Original PDF

    IRG4IBC30S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRG4IBC30S

    Abstract: No abstract text available
    Text: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30S O-220 IRG4IBC30S PDF

    IRG4IBC30S

    Abstract: No abstract text available
    Text: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30S O-220 IRG4IBC30S PDF

    TRANSISTOR marking ar code 3432

    Abstract: No abstract text available
    Text: PD - 95637 IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30SPbF O-220 I840G TRANSISTOR marking ar code 3432 PDF

    marking code 58W 04

    Abstract: No abstract text available
    Text: PD - 95637 IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30SPbF O-220 I840G marking code 58W 04 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4IBC30S O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		5637A IRG4IBC30SPbF O-220 PDF

    transistor 58w

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		5637A IRG4IBC30SPbF O-220 transistor 58w PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    IRFP460Z

    Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
    Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB


    Original     		O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205 PDF

    SA55BA60

    Abstract: tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A
    Text: APPLICATION NOTE AN-1045 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA AC TIG Welding: Output Inverter Design Basics By A. Roccaro, R. Filippo, M. Salato Topics Covered Introduction Application on TIG welding Full Bridge Inverter Half-Bridge Inverter


    Original     		AN-1045 AN-955 AN-1012 AN-1023 SA55BA60 tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A PDF