IRG4PH40S Search Results

IRG4PH40S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG4PH40S		International Rectifier	IGBT		Original	PDF

IRG4PH40S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor A55 Abstract: mount transistor A55 IRG4PH40 Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC transistor A55 mount transistor A55 IRG4PH40	PDF
IRG4PH40S Abstract: No abstract text available Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC IRG4PH40S	PDF
IRG4PH40S Abstract: No abstract text available Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V	Original	IRG4PH40S O-247AC O-247AC IRG4PH40S	PDF
300C Abstract: IRG4CH40SB IRG4PH40S Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 300C IRG4PH40S	PDF
ir igbt 1200V 10A Abstract: 1kA IGBT 300C IRG4CH40SB IRG4PH40S Text: PD - 91799 IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	IRG4CH40SB IRG4CH40SB IRG4PH40S ir igbt 1200V 10A 1kA IGBT 300C IRG4PH40S	PDF
2 SK 0243 Abstract: 300C IRG4CH40SB IRG4PH40S Text: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage	Original	PD-91799A IRG4CH40SB IRG4CH40SB IRG4PH40S 2 SK 0243 300C IRG4PH40S	PDF
2 SK 0243 Abstract: No abstract text available Text: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.	OCR Scan	IRG4CH40SB PD-91799A IRG4CH40SB IRG4PH40S 2 SK 0243	PDF