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    Infineon Technologies AG IRG7PH50UPBF

    IGBT TRENCH 1200V 140A TO-247AC
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    International Rectifier IRG7PH50UPBF

    Discrete IGBT without Anti-Parallel Diode
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    IRG7PH50UPBF Datasheets (1)

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    IRG7PH50UPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 140A 556W TO247AC Original PDF

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    irg7ph50

    Abstract: No abstract text available
    Text: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 PDF

    irg7ph50

    Abstract: IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud
    Text: PD - 97549 IRG7PH50UPbF IRG7PH50U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		IRG7PH50UPbF IRG7PH50U-EP O-247AD irg7ph50 IRG7PH50U IRG7PH50UPBF irg7ph50udpbf 80V-0 C-150 irg7ph*50ud PDF