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    IRGCC30UE Datasheets (1)

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    IRGCC30UE International Rectifier IGBT Original PDF

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    IRGBC30U

    Abstract: IRGCC30UE 91429
    Text: Previous Datasheet Index Next Data Sheet PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U 91429 PDF

    IRGBC30U

    Abstract: IRGCC30UE
    Text: PD-9.1429 TARGET IRGCC30UE IRGCC30UE IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCC30UE IRGCC30UE IRGBC30U IRGBC30U PDF

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    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		IRGCC30UE 250pA, 250pA PDF