igbt 20A 1200v
Abstract: IRGCH20SE IRGPH20S
Text: PD-9.1440 TARGET IRGCH20SE IRGCH20SE IGBT Die in Wafer Form C 1200 V Size 2 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCH20SE
IRGCH20SE
IRGPH20S
igbt 20A 1200v
IRGPH20S
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IRGCH20SE
Abstract: IRGPH20S
Text: Previous Datasheet Index Next Data Sheet PD-9.1440 TARGET IRGCH20SE IRGCH20SE IGBT Die in Wafer Form C 1200 V Size 2 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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Original
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PDF
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IRGCH20SE
IRGCH20SE
IRGPH20S
IRGPH20S
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage
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OCR Scan
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PDF
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IRGCH20SE
250pA,
250pA
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