Untitled
Abstract: No abstract text available
Text: IRGMC50FU Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.21
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IRGMC50FU
delay25nÃ
time49nÃ
time440nÃ
me49nÃ
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IRGMC50F
Abstract: IRGMC50FD IRGMC50FU 39AF
Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50F
IRGMC50FD
IRGMC50FU
MIL-S-19500
O-254
IRGMC50F
IRGMC50FU
39AF
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Untitled
Abstract: No abstract text available
Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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OCR Scan
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IRGMC50F
IRGMC50FD
IRGMC50FU
O-254
4fiSS45S
MIL-S-19500
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