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    Infineon Technologies AG IRGP6660DPBF

    IGBT 600V 95A TO-247AC
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    IRGP6660DPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGP6660DPBF Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 95A 330W TO247AC Original PDF

    IRGP6660DPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

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    Abstract: No abstract text available
    Text: IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 48A E G G Gate C Collector Features Benefits High efficiency in a wide range of applications


    Original     		IRGP6660DPbF IRGP6660D-EPbF O-247AD O-247AC IRGP6660DPbF/IRGP6660D-EPbF JESD47F) PDF