Untitled
Abstract: No abstract text available
Text: PD-94723B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
PDF
|
PD-94723B
O-254AA)
IRHMS67160
IRHMS67160
IRHMS63160
90MeV/
O-254AA.
MIL-PRF-19500
|
2n7580
Abstract: IRHMS67160 2N7580T1
Text: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
PDF
|
PD-94723E
O-254AA)
IRHMS67160
IRHMS63160
2N7580T1
90MeV/
O-254AA.
MIL-PRF-19500
2n7580
|
IRHMS63160
Abstract: IRHMS67160
Text: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
PDF
|
PD-94723A
O-254AA)
IRHMS67160
IRHMS67160
IRHMS63160
90MeV/
O-254AA.
MIL-PRF-19500
IRHMS63160
|
IRHMS63160
Abstract: IRHMS67160 irh*67160
Text: PD-94723C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
PDF
|
PD-94723C
O-254AA)
IRHMS67160
IRHMS67160
IRHMS63160
90MeV/
O-254AA.
MIL-PRF-19500
IRHMS63160
irh*67160
|
IRHMS63160
Abstract: IRHMS64160 IRHMS67160 IRHMS68160
Text: PD - 94723 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 300K Rads (Si) 0.011Ω 45A* IRHMS64160
|
Original
|
PDF
|
O-254AA)
IRHMS67160
IRHMS67160
IRHMS63160
IRHMS64160
IRHMS68160
1000K
90MeV/
O-254AA.
MIL-PRF-19500
IRHMS63160
IRHMS64160
|
Untitled
Abstract: No abstract text available
Text: PD-94723E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7580T1 IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
|
Original
|
PDF
|
PD-94723E
O-254AA)
2N7580T1
IRHMS67160
IRHMS67160
IRHMS63160
90MeV/
O-254AA.
MIL-PRF-19500
|
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
|
Original
|
PDF
|
30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
|