IRHN7130
Abstract: IRHN3130 IRHN4130 IRHN8130 diode smd to3
Text: PD - 90821C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7130 100K Rads (Si) IRHN3130 300K Rads (Si) IRHN4130 600K Rads (Si) IRHN8130 1000K Rads (Si)
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90821C
IRHN7130
IRHN3130
IRHN4130
IRHN8130
1000K
sw25V,
MIL-STD-750,
MlL-STD-750,
IRHN7130
IRHN3130
IRHN4130
IRHN8130
diode smd to3
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Untitled
Abstract: No abstract text available
Text: PD - 90821C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7130 100K Rads (Si) IRHN3130 300K Rads (Si) IRHN4130 600K Rads (Si) IRHN8130 1000K Rads (Si)
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90821C
IRHN7130
IRHN3130
IRHN4130
IRHN8130
1000K
MIL-STD-750,
MlL-STD-750,
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IRHN7130
Abstract: IRHN8130
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology
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IRHN7130
IRHN8130
IRHN7130
IRHN8130
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IRHN7130
Abstract: IRHN8130
Text: PD - 90821B IRHN7130 IRHN8130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.18Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90821B
IRHN7130
IRHN8130
100Volt,
1x106
IRHN7130
IRHN8130
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IRHN7130
Abstract: IRHN8130
Text: Provisional Data Sheet No. PD-9.821A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7130 IRHN8130 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100 Volt, 0.18Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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IRHN7130
IRHN8130
IRHN7130
IRHN8130
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.821A INTERNATIONAL RECTIFIER X O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7130 IRHN8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology
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IRHN7130
IRHN8130
1x106
1x105
5S45B
h-285
IRHN7130,
IRHN8130
H-286
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h284
Abstract: No abstract text available
Text: Data Sheet No. PD-9.821A INTERNATIONAL RECTIFIER I Ö R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7130 IRHN8130 MEGA RAD HARD 100 Volt, 0.18«, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN7130
IRHN8130
1x105
H-285
IRHN7130,
IRHN8130
H-286
h284
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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IRHE7110
Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0
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4flss452
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN80S4
IRHN7130
1RHF8130
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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