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    IRHNJ67234 Price and Stock

    Infineon Technologies AG IRHNJ67234B

    Power MOSFET, N Channel, 250 V, 12.4 A, 210 Milliohms, SMD-0.5, 3 Pins, Surface Mount - Bulk (Alt: IRHNJ67234B)
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    Infineon Technologies AG IRHNJ67234SCS-03

    Transistor MOSFET N-Channel 250V 12.4A 3-Pin CSMD - Bulk (Alt: IRHNJ67234SCS-03)
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    Infineon Technologies AG IRHNJ67234SCS-10

    Transistor MOSFET N-Channel 250V 12.4A 3-Pin CSMD - Bulk (Alt: IRHNJ67234SCS-10)
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    Infineon Technologies AG IRHNJ67234SCS-01

    Transistor MOSFET N-Channel 250V 12.4A 3-Pin CSMD - Bulk (Alt: IRHNJ67234SCS-01)
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    IRHNJ67234 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHNJ67234 International Rectifier Original PDF

    IRHNJ67234 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-97197B IRHNJ67234 JANSR2N7593U3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67234 100K Rads (Si) IRHNJ63234 300K Rads (Si) RDS(on) I D QPL Part Number


    Original
    PD-97197B IRHNJ67234 JANSR2N7593U3 MIL-PRF-19500/746 IRHNJ67234 IRHNJ63234 JANSF2N7593U3 90MeV/ MIL-STD-750, PDF

    MG 78A

    Abstract: No abstract text available
    Text: PD-97197A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6 TM technology provides


    Original
    PD-97197A IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, MG 78A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-97197A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A International Rectifier’s R6 TM technology provides


    Original
    PD-97197A IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, PDF

    PD-97197C

    Abstract: No abstract text available
    Text: PD-97197C IRHNJ67234 JANSR2N7593U3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/746 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67234 100K Rads (Si) IRHNJ63234 300K Rads (Si) RDS(on) I D QPL Part Number


    Original
    PD-97197C IRHNJ67234 JANSR2N7593U3 MIL-PRF-19500/746 IRHNJ67234 IRHNJ63234 JANSF2N7593U3 90MeV/ MIL-STD-750, PD-97197C PDF

    IRHNJ63234

    Abstract: IRHNJ67234 PD-97197
    Text: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides


    Original
    PD-97197 IRHNJ67234 IRHNJ63234 90MeV/ MIL-STD-750, MlL-STD-750, IRHNJ63234 IRHNJ67234 PD-97197 PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original
    30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    2N7591

    Abstract: 2n7587 2N7587U3 2N7591U3 2N7593 2N7589 2N7593U3 2N7587U3C jans 2N7587U3 2N7591U3C
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 June 2010. MIL-PRF-19500/746A 19 March 2010 SUPERSEDING MIL-PRF-19500/746 15 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original
    MIL-PRF-19500/746A MIL-PRF-19500/746 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, 2N7593U3C, 2N7591 2n7587 2N7587U3 2N7591U3 2N7593 2N7589 2N7593U3 2N7587U3C jans 2N7587U3 2N7591U3C PDF