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    Infineon Technologies AG IRHNJ67C30SCS-01

    Transistor MOSFET N-Channel 600V 3.4A 3-Pin SMD-0.5 - Bulk (Alt: IRHNJ67C30SCS-01)
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    IRHNJ67C30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRHNJ67C30 International Rectifier Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


    Original     		PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750,

    2n7598

    Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A
    Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides


    Original     		PDF PD-97198A 2N7598U3 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750, 2n7598 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A

    97198

    Abstract: IRHNJ67C30 IRHNJ63C30
    Text: PD-97198 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67C30 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A SMD-0.5 International Rectifier’s R6TM technology provides


    Original     		PDF PD-97198 IRHNJ67C30 IRHNJ63C30 90MeV/ MIL-STD-750, MlL-STD-750, 97198 IRHNJ67C30 IRHNJ63C30