IRL 1540 N Search Results

IRL 1540 N Result Highlights (3)

Part	Manufacturer	Description
DC1540B	Analog Devices	LTC2977 Demo Board Set: Eight
LTC1540IMS8#TRPBF	Analog Devices	Nanopower Comp w/ Ref
LTC1540IS8#PBF	Analog Devices	Nanopower Comp w/ Ref

IRL 1540 N Price and Stock

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International Rectifier IRLI540N 23 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB (Also Known As: IRL1540N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRLI540N		13			1 $42 10 $39.9 100 $37.8 1000 $37.8 10000 $37.8	Buy Now

IRL 1540 N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IrL 1540 N Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784 Text: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure	Original	PDF	AN1784 SMA428A SMA428A IrL 1540 N IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 AN1784
IrL 1540 N Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF Text: UGF15030 30W, 1435-1540 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 1435 to 1540 MHz. Rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier	Original	PDF	UGF15030 26VDC, 1540MHz, UGF15030F UGF15030 IrL 1540 N 1540MHz F1540 ATC100 Cree Microwave ZENER 26v 10UF 22UF
IrL 1540 N Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	PDF	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
IrL 1540 N Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	PDF	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all	Original	PDF	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3
Untitled Abstract: No abstract text available Text: PGE 609 02 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +16 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses	Original	PDF	RS-232) SE-164 1522-PGE
Untitled Abstract: No abstract text available Text: PGE 609 05 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +19 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses	Original	PDF	RS-232) SE-164 1522-PGE
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3
IrL 1540 N Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22
IRL 1630 Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to	Original	PDF	MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IRL 1630 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HSR3 MRF7S16150HR
Untitled Abstract: No abstract text available Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY	Original	PDF	SMA661AS OT666) OT666 SMA661AS 575GHz)
IrL 1540 N Abstract: SMA661AS SMA661ASTR SMA661 Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ ESD PROTECTION ± 2kV HBM	Original	PDF	SMA661AS OT666) OT666 SMA661AS 575GHz) IrL 1540 N SMA661ASTR SMA661
atx smps schematic diagram Abstract: 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330 NCP4330DR2G TL431 ac-dc inverter applications Text: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the	Original	PDF	NCP4330 NCP4330 NCP4330-based NCP4330/D atx smps schematic diagram 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330DR2G TL431 ac-dc inverter applications
4330D Abstract: No abstract text available Text: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the	Original	PDF	NCP4330 NCP4330 NCP4330â NCP4330/D 4330D

CAPACITOR chip murata mtbf Abstract: BD136 Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 MRF15090/D CAPACITOR chip murata mtbf BD136
CAPACITOR chip murata mtbf Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D CAPACITOR chip murata mtbf MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
BD136 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 DEVICEMRF15090/D BD136
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3 Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090/D* CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR
Untitled Abstract: No abstract text available Text: TriQuint €► Advance Product Information SEMICONDUCTOR« 17-21 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9088A-EPU Primary Applications Satellite Systems 17-21 GHz Frequency Range 22 dBm @ P2dB Nominal Pout	OCR Scan	PDF	TGA9088A-EPU EG1901A TGA9088A)
178 09T Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
rohm mtbf Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	OCR Scan	PDF	MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
capacitor mallory Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.	OCR Scan	PDF	BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf

IRL 1540 N Search Results

IRL 1540 N Result Highlights (3)

IRL 1540 N Price and Stock

International Rectifier IRLI540N

IRL 1540 N Datasheets Context Search

IrL 1540 N

IrL 1540 N

IrL 1540 N

IrL 1540 N

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IrL 1540 N

IRL 1630

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IrL 1540 N

atx smps schematic diagram

4330D

CAPACITOR chip murata mtbf

CAPACITOR chip murata mtbf

BD136

CAPACITOR chip murata mtbf

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CAPACITOR chip murata mtbf

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178 09T

rohm mtbf

capacitor mallory