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    IRLI3103 Datasheets (1)

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    IRLI3103 International Rectifier HEXFET Power Mosfet Original PDF

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    IRFI840G

    Abstract: IRL3103 IRLI3103
    Text: Previous Datasheet Index Next Data Sheet PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V


    Original     		IRLI3103 O-220 IRFI840G IRL3103 IRLI3103 PDF

    marking 34A

    Abstract: IRFI840G IRL3103 IRLI3103
    Text: PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.014 Ω ID = 38A Description


    Original     		IRLI3103 O-220 marking 34A IRFI840G IRL3103 IRLI3103 PDF

    Untitled

    Abstract: No abstract text available
    Text: bitemational S Rectifier PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    OCR Scan     		IRLI3103 PDF

    Untitled

    Abstract: No abstract text available
    Text: International [MlRectifier PD 9.1377 IRLI3103 PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated


    OCR Scan     		IRLI3103 PDF