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    IS61LV2568 Price and Stock

    Integrated Silicon Solution Inc IS61LV2568L-10T

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Integrated Silicon Solution Inc IS61LV2568L-8TL

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Integrated Silicon Solution Inc IS61LV2568L-10TL

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Quest Components IS61LV2568L-10TL 3
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    Integrated Silicon Solution Inc IS61LV2568L-10KLI

    IC SRAM 2MBIT PARALLEL 36SOJ
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    Mouser Electronics IS61LV2568L-10KLI 3
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    TME IS61LV2568L-10KLI 1
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    Avnet Silica IS61LV2568L-10KLI 14 Weeks 19
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    Integrated Silicon Solution Inc IS61LV2568L-10T-TR

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey IS61LV2568L-10T-TR Reel 1,000
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    IS61LV2568 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS61LV2568 Integrated Silicon Solution 256K x 8 HIGH-SPEED CMOS STATIC RAM Original PDF
    IS61LV2568 Integrated Silicon Solution 256K x 8 HIGH-SPEED CMOS STATIC RAM Original PDF
    IS61LV2568-10K Integrated Circuit Solution 10ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-10K Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-10KI Integrated Circuit Solution 10ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-10KI Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-10T Integrated Circuit Solution 10ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-10T Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-10TI Integrated Circuit Solution 10ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-10TI Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-12K Integrated Circuit Solution 12ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-12K Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-12KI Integrated Circuit Solution 12ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-12KI Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-12T Integrated Circuit Solution 12ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-12T Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-12TI Integrated Circuit Solution 12ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-12TI Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF
    IS61LV2568-15K Integrated Circuit Solution 15ns 3.3V 256K x 8 high-speed CMOS static RAM Original PDF
    IS61LV2568-15K Integrated Silicon Solution 256K x 86 high speed CMOS static RAM Original PDF

    IS61LV2568 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil

    IS61LV2568

    Abstract: IS61LV2568-10K IS61LV2568-10KI IS61LV2568-10T IS61LV2568-10TI IS61LV2568-12K IS61LV2568-12KI IS61LV2568-12T
    Text: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10 and 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		PDF IS61LV2568 36-pin 400-mil 44-pin IS61LV2568 144-word IS61LV2568-10K IS61LV2568-10T IS61LV2568-10K IS61LV2568-10KI IS61LV2568-10T IS61LV2568-10TI IS61LV2568-12K IS61LV2568-12KI IS61LV2568-12T

    IS61LV2568

    Abstract: IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-8K IS61LV2568-8T
    Text: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		PDF IS61LV2568 36-pin 400-mil 44-pin IS61LV2568 144-word IS61LV2568-10K IS61LV2568-10T IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-8K IS61LV2568-8T

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • NOVEMBER 2004 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word innovati11

    IS61LV2568L

    Abstract: IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 30mA (typ.) • Standby Current: IS61LV2568L: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil IS61LV2568L IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256

    IS61LV2568L

    Abstract: IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2002 FEATURES FEATURES Continued • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 60mA (typ.) IS61LV2568LL: 25mA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil IS61LV2568L IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil

    IS61LV2568L

    Abstract: IS61LV2568L-10KI IS61LV2568L-10KLI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T
    Text: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • JULY 2005 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word IS61LV2568L-10KI IS61LV2568L-10KLI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T

    IS61LV2568

    Abstract: IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-15K IS61LV2568-8K IS61LV2568-8T
    Text: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		PDF IS61LV2568 36-pin 400-mil 44-pin IS61LV2568 144-word IS61LV2568-10K IS61LV2568-10T IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-15K IS61LV2568-8K IS61LV2568-8T

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: — 8, 10, 12 and 15 ns • High-preformance, lower-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		PDF IS61LV2568 36-pin 400mil 44-pin IS61LV2568 144-word IS61LV2568-10TI IS61LV2568-10KI

    IS61LV2568L

    Abstract: 61LV2568L IS61LV2568L-10KI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T IS61LV2568L-8TL is61lv2568l10tl
    Text: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word 61LV2568L IS61LV2568L-10KI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T IS61LV2568L-8TL is61lv2568l10tl

    is25c64B

    Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    IC1210-m128LQ

    Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
    Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are


    Original     		PDF

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    IS61LV256

    Abstract: IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word PK13197T28 IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    IS61LF51232-8

    Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
    Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML


    Original     		PDF IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    Untitled

    Abstract: No abstract text available
    Text: IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word IS61LV256-12TI IS61LV256-12JI 300mil IS61LV256-15T IS61LV256-15J IS61LV256-15TI

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM MAY 1999 FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby


    Original     		PDF IS61LV256 IS61LV256 768-word 300-mil IS61LV256-8T IS61LV256-8J IS61LV256-10T IS61LV256-10J IS61LV256-12T

    Untitled

    Abstract: No abstract text available
    Text: ISST IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM a d v a n c e in fo rm a tio n FEATURES DESCRIPTION • High-speed access times: 8, 10,12 and 15 ns The IS S IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568


    OCR Scan     		PDF IS61LV2568 IIS61LV2568 144-word IS61LV2568-10K IS61LV2568-10T 400-mil IS61LV2568-10KI IS61LV2568-10TI