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Abstract: No abstract text available
Text: CY7C68310 ISD-300LP Low-Power USB 2.0 to ATA/ATAPI Bridge IC Cypress Semiconductor Corporation Document #: 38-08030 Rev. *E • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised May 30, 2003 CY7C68310 TABLE OF CONTENTS 1.0 INTRODUCTION . 4
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CY7C68310
ISD-300LPTM
CY7C68310-80AC
IEC-GQ-6002-01
IEC-6005-01.
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Untitled
Abstract: No abstract text available
Text: CY7C68310 PRELIMINARY ISD-300LP Low-Power USB 2.0 to ATA/ATAPI Bridge IC Cypress Semiconductor Corporation Document #: 38-08030 Rev. *C • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised April 7, 2003 PRELIMINARY CY7C68310 TABLE OF CONTENTS
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CY7C68310
ISD-300LPâ
CY7C68310
CY7C68310-80AC
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CY7C68310-80AC
Abstract: CY4617 CY7C68310 DD12 DD15
Text: CY7C68310 ISD-300LP Low-Power USB 2.0 to ATA/ATAPI Bridge IC Cypress Semiconductor Corporation Document #: 38-08030 Rev. *D • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised May 19, 2003 CY7C68310 TABLE OF CONTENTS 1.0 INTRODUCTION . 4
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CY7C68310
ISD-300LPTM
CY7C68310
ISD-300LPTM
CY7C68310-80AC
CY7C68310-80AC
CY4617
DD12
DD15
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ISD 1820
Abstract: ISD 1820 P MJQ-XXX-40 S 2153 d 56L22 T5620 T5650 T5675 T5681 T5683
Text: IC - Transformer Selection Guide for T1/E1/C EPT/ISD N -PR I Quad Ports IC Part N umber R eceive 1:2C T 1:2CT MJQ-006-40 C S 61535A , C S 61574A , C S 61575, C S 6158A T1 1:1.15 1:2CT MJQ-002-40 C S 61535A , C S 61574A , C S 61575, C S 6158A E1 1:2C T 1:2CT
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MJQ-006-40
1535A
1574A
MJQ-002-40
MJQ-001-40
MJQ-017-40
MJQ-015-40
ISD 1820
ISD 1820 P
MJQ-XXX-40
S 2153 d
56L22
T5620
T5650
T5675
T5681
T5683
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ISD 1820
Abstract: OMS420 OMS420A OMS520 OMS620
Text: OMS420 OMS520 OMS620 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 200 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration
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OMS420
OMS520
OMS620
100mm
ISD 1820
OMS420
OMS420A
OMS520
OMS620
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ISD 1820
Abstract: OMS410 OMS410A OMS510 OMS520 shunt resistor current motor
Text: OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration
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OMS410
OMS410A
OMS510
100mm
ISD 1820
OMS410A
OMS510
OMS520
shunt resistor current motor
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Untitled
Abstract: No abstract text available
Text: PRECISION TEMPERATURE CALIBRATOR WITH PRESSURE OPTION MODEL CLB CLB 3590 $ Model Shown Temperature Calibrator CLB $3590 Shown with optional CLB-PM-602-602 Pressure module ($1595) ߜ Calibration Lab in a Nutshell ߜ Rotatable Control Panel ߜ Reads Input and
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CLB-PM-602-602
24Volt,
Pt100
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ISD 1820 P
Abstract: IRFPS37N50A ISD 1820
Text: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ
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IRFPS29N60LPbF
130ns
Super-247TM
IRFPS37N50A
O-247TM
ISD 1820 P
IRFPS37N50A
ISD 1820
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TO-274
Abstract: IRFPS29N60L IRFPS37N50A
Text: PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications
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IRFPS29N60L
130ns
Super-247TM
O-274AA
IRFPS37N50A
IRFPS37N50A
O-247TM
TO-274
IRFPS29N60L
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ISD 1820
Abstract: IRF 544 IRF 547 MOSFET MOSFET IRF 630 Datasheet IRFPS29N60L IRFPS37N50A
Text: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications
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4622A
IRFPS29N60L
130ns
Super-247TM
O-274AA
IRFPS37N50A
IRFPS37N50A
O-247TM
ISD 1820
IRF 544
IRF 547 MOSFET
MOSFET IRF 630 Datasheet
IRFPS29N60L
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Untitled
Abstract: No abstract text available
Text: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ
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IRFPS29N60LPbF
130ns
Super-247â
08-Mar-07
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dallas ds1820
Abstract: talking thermometer PIC program sl22 thermistor 0526 lsd ISD 1820 audio ISD 1820 CHICO A3 12CXXX dallas DS1820 sensor SL12 thermistor
Text: Sensor Interface Totally Terrific Talking Thermometer Author: David Brobst Solutions Cubed Chico, CA OVERVIEW This design is being used as an entry into the Microchip De$igning for Dollar$ design contest for the month of July. It is based upon monitoring and communicating
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PIC12CXXX
DS40160A/3
012-page
dallas ds1820
talking thermometer PIC program
sl22 thermistor
0526 lsd
ISD 1820 audio
ISD 1820
CHICO A3
12CXXX
dallas DS1820 sensor
SL12 thermistor
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ISD 1820
Abstract: power mosfet 600v 29a ISD 1820 P IRFPS37N50A
Text: PD - 95907 SMPS MOSFET IRFPS29N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 175mΩ
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IRFPS29N60LPbF
130ns
Super-247TM
12-Mar-07
ISD 1820
power mosfet 600v 29a
ISD 1820 P
IRFPS37N50A
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APT34M120J
Abstract: MIC4452
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M120J
E145592
APT34M120J
MIC4452
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APT34M120J
Abstract: No abstract text available
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M120J
E145592
APT34M120J
OT-227
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Abstract: No abstract text available
Text: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M120J
E145592
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Abstract: No abstract text available
Text: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT32F120J
430ns
OT-227
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4n52k
Abstract: 4N52K3 std4n52k3 STF4N52K3 STP4N52K3
Text: STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features Order codes STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 VDSS 525 V RDS on
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STD4N52K3,
STF4N52K3,
STP4N52K3,
STU4N52K3
O-220FP,
O-220
STD4N52K3
STF4N52K3
STP4N52K3
STU4N52K3
4n52k
4N52K3
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ISD 1820
Abstract: power mosfet 600v 29a IRFPS29N60L IRFPS37N50A
Text: PD - 94622A SMPS MOSFET IRFPS29N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications
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4622A
IRFPS29N60L
130ns
Super-247TM
12-Mar-07
ISD 1820
power mosfet 600v 29a
IRFPS29N60L
IRFPS37N50A
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Untitled
Abstract: No abstract text available
Text: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M120J
E145592
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Untitled
Abstract: No abstract text available
Text: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT32F120J
430ns
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4n52k
Abstract: 4N52K3 STD4N52K3 STP4N STP4N52K3
Text: STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ω, IPAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features Order codes VDSS RDS on max ID Pw 3 3 2 STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 2.5 A 2.5 A (1)
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STD4N52K3,
STF4N52K3
STP4N52K3,
STU4N52K3
O-220FP,
O-220
STD4N52K3
STP4N52K3
4n52k
4N52K3
STD4N52K3
STP4N
STP4N52K3
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mosfet h bridge 25a
Abstract: APT32F120J MIC4452
Text: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT32F120J
430ns
mosfet h bridge 25a
APT32F120J
MIC4452
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Untitled
Abstract: No abstract text available
Text: ISOCOn CONPONENTS LTD 7SC D IflflbSlD DGGQ112 015 • ISO IS -2 0 2 ONE CHANNEL ISD-202 TWO CHANNEL ISQ -202 FOUR CHANNEL OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F — _ CAMPBELL CA. 950Q8_ P a c k ig * Dimensions in Inches mm
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DGGQ112
ISD-202
950Q8_
ISD-202)
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