6790
Abstract: MOSFET 50V 100A IRFPS3810PBF
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247TM
6790
MOSFET 50V 100A
IRFPS3810PBF
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IRFB16N50KPBF
Abstract: No abstract text available
Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free l l l l l VDSS RDS(on) typ. 285m: 500V ID 17A
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IRFB16N50KPbF
O-220AB
O-220AB
IRFB16N50KPBF
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IRFPS3810
Abstract: No abstract text available
Text: PD - 93912A IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
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3912A
IRFPS3810
Super-247TM
5M-1994.
O-274AA
IRFPS3810
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247â
Rati789
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22mH 400v inductor
Abstract: IRFB16N50K TO-220aB DIODE 11A
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
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5855A
IRFB16N50K
O-220AB
O-220AB
22mH 400v inductor
IRFB16N50K
TO-220aB DIODE 11A
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Untitled
Abstract: No abstract text available
Text: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A
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IRFPS3810PbF
Super-247â
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6790
Abstract: TO274 IRFPS3810 TO-274
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
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93912B
IRFPS3810
Super-247TM
5M-1994.
O-274AA
6790
TO274
IRFPS3810
TO-274
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Untitled
Abstract: No abstract text available
Text: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A S Description
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93912B
IRFPS3810
Super-247â
5M-1994.
O-274AA
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IRFB16N50K
Abstract: No abstract text available
Text: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
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IRFB16N50K
O-220AB
O-220AB
IRFB16N50K
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IRFB16N50K
Abstract: SiHFB16N50K SiHFB16N50K-E3
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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IRFB16N50K,
SiHFB16N50K
O-220
18-Jul-08
IRFB16N50K
SiHFB16N50K-E3
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IRFB16N50K
Abstract: SiHFB16N50K SiHFB16N50K-E3
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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IRFB16N50K,
SiHFB16N50K
O-220
18-Jul-08
IRFB16N50K
SiHFB16N50K-E3
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Untitled
Abstract: No abstract text available
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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IRFB16N50K,
SiHFB16N50K
O-220
O-220
IRFB16N50KPbF
SiHFB16N50K-E3
IRFB16Nmerchantability,
12-Mar-07
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22mH 400v inductor
Abstract: IRFB16N50K
Text: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive
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5855A
IRFB16N50K
O-220AB
12-Mar-07
22mH 400v inductor
IRFB16N50K
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Untitled
Abstract: No abstract text available
Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A
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IRFB16N50KPbF
O-220AB
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A
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IRFB16N50KPbF
O-220AB
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 94436A IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ
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4436A
IRF2804
O-220AB
IRF1010
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IRF2804
Abstract: MOSFET driver 175C
Text: PD - 94436B IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ
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94436B
IRF2804
O-220AB
IRF2804
MOSFET driver 175C
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Untitled
Abstract: No abstract text available
Text: PD - 94495A IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,
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4495A
IRF2804S
IRF2804L
variet90
EIA-418.
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STL30NF3LL
Abstract: No abstract text available
Text: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
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STL30NF3LL
STL30NF3LL
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STL30NF3LL
Abstract: No abstract text available
Text: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
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STL30NF3LL
STL30NF3LL
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stl30nf3ll
Abstract: No abstract text available
Text: STL30NF3LL N-CHANNEL 30V - 0.006Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA TYPE VDSS R DS on ID STL30NF3LL 30 V < 0.008 Ω 30 A • ■ ■ TYPICAL RDS(on) = 0.006Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
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STL30NF3LL
stl30nf3ll
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IRF2804L
Abstract: IRF2804S
Text: PD - 94495B IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,
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94495B
IRF2804S
IRF2804L
EIA-418.
IRF2804L
IRF2804S
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ISD 2210
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVN2210B*
ZVN2210L
stability39
O-220
ISD 2210
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ZVP 210
Abstract: ZVP2210B zetex zvp ZVP P-channel
Text: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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ZVP2210B*
ZVP2210L
O-220
ZVP 210
ZVP2210B
zetex zvp
ZVP P-channel
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