high voltage current mirror
Abstract: RBS 2111 HIP5600 "high voltage current mirror" irf450 mosfet drive circuit diagram Automatic voltage regulator RBS HIP2500 1N4000 1N5622 HIP5500
Text: Application Note 9335 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
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ISO9000
HIP5500
500VDC
15VDC
high voltage current mirror
RBS 2111
HIP5600
"high voltage current mirror"
irf450 mosfet drive circuit diagram
Automatic voltage regulator RBS
HIP2500
1N4000
1N5622
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Y5 smd
Abstract: y6 smd transistor ACS04MS "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
Text: ACS04MS Data Sheet November 1998 File Number Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.
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ACS04MS
ACS04MS
MIL-PRF-38535
Y5 smd
y6 smd transistor
"silicon on sapphire"
cmos SENSOR 15um
SMD TRANSISTOR Y1
smd transistor y5
y4 smd transistor
ACS04DMSR-03
ACS04HMSR-03
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AN9105
Abstract: SCHEMATIC POWER SUPPLY WITH IGBTS inverter 3kw schematic 3kw inverter GS601 RUR860 SP601 half-bridge converter 230vac to 30vdc transformer half-bridge switching gate driver
Text: HVIC/IGBT Half-Bridge Converter Evaluation Circuit Application Note May 1992 AN9105.1 Author: George Danz The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration up to 500VDC. Power supply and motor control inverters can
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AN9105
500VDC.
230VAC
SP601
SCHEMATIC POWER SUPPLY WITH IGBTS
inverter 3kw schematic
3kw inverter
GS601
RUR860
half-bridge converter
230vac to 30vdc transformer
half-bridge switching gate driver
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iso9000 inverter
Abstract: y6 smd transistor 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Text: ACTS04MS Radiation Hardened Hex Inverter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Intersil’s QM Plan 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835
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ACTS04MS
MIL-PRF-38535
MIL-STD-1835
CDIP2-T14,
iso9000 inverter
y6 smd transistor
5962F9671201VCC
5962F9671201VXC
ACTS04HMSR
ACTS04MS
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y4 smd
Abstract: 5962F9860201V9A 5962F9860201VCC 5962F9860201VXC ACS05DMSR-03 ACS05MS
Text: ACS05MS Data Sheet Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW level on the input causes the corresponding Y output to enter
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ACS05MS
ACS05MS
MIL-PRF-38535
y4 smd
5962F9860201V9A
5962F9860201VCC
5962F9860201VXC
ACS05DMSR-03
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IC 7585
Abstract: y6 smd transistor 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Text: ACTS04MS TM Radiation Hardened Hex Inverter January 1996 tle TS S ia- Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Intersil’s QM Plan
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ACTS04MS
MIL-PRF-38535
MIL-STD-1835
CDIP2-T14,
CH-1009
IC 7585
y6 smd transistor
5962F9671201VCC
5962F9671201VXC
ACTS04HMSR
ACTS04MS
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FDD6637-F085
Abstract: No abstract text available
Text: FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications Typ rDS on = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low
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FDD6637
155oC,
FDD6637-F085
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FDD4685
Abstract: 84A2
Text: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A Inverter Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A Power Supplies Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low
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FDD4685
84A2
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FDD4243
Abstract: FDD4243-F085
Text: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low
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FDD4243
130oC,
FDD4243-F085
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Untitled
Abstract: No abstract text available
Text: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications ̈ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A ̈ Inverter ̈ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ̈ Power Supplies ̈ Fast Switching ̈ Automotive Engine Control
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FDD8447L
O-252)
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FDD8447L
Abstract: FDD8447L-F085 fdd*8447l N-Channel 40V MOSFET FDD8447
Text: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control
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FDD8447L
O-252)
FDD8447L-F085
fdd*8447l
N-Channel 40V MOSFET
FDD8447
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Untitled
Abstract: No abstract text available
Text: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications ̈ Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A ̈ Inverter ̈ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A ̈ Power Supplies ̈ Typ Qg(TOT) = 19nC at VGS = -5V ̈ High performance trench technology for extremely low
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FDD4685
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Untitled
Abstract: No abstract text available
Text: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications ̈ Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A ̈ Inverter ̈ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A ̈ Power Supplies ̈ Typ Qg(TOT) = 21nC at VGS = -10V ̈ High performance trench technology for extremely low
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FDD4243
130oC,
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Untitled
Abstract: No abstract text available
Text: FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications ̈ Typ rDS on = 9.7mΩ at VGS = -10V, ID =- 14A ̈ Inverter ̈ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A ̈ Power Supplies ̈ Typ Qg(10) = 45nC at VGS = -10V ̈ ̈ High performance trench technology for extremely low
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FDD6637
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AN9860
Abstract: No abstract text available
Text: The Importance of the Free Wheeling Diode Application Note October 1999 AN9860 Authors: Sampat Shekhawat, Jon Gladish, Praveen Shenoy, and Barry Wood In full-bridge inverters and DC to DC power supply circuits, the Free Wheeling Diode FWD reverse recovery current and
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AN9860
AN9860
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HCTS04D
Abstract: irlml 4015m HCTS04HMSR HCTS04K HCTS04KMSR HCTS04MS HCTS04DMSR
Text: HCTS04MS TM Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS04MS
MIL-STD-1835
CDIP2-T14
-55oC
125oC
HCTS04D
irlml 4015m
HCTS04HMSR
HCTS04K
HCTS04KMSR
HCTS04MS
HCTS04DMSR
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CD74HC04
Abstract: 74HCT 74LS CD54HC04 CD54HCT04 CD74HC04E CD74HC04M CD74HCT04 CD74HCT04E CD74HCT04M
Text: CD54HC04, CD54HCT04, CD74HC04, CD74HCT04 S E M I C O N D U C T O R High Speed CMOS Logic Hex Inverter August 1997 Features Description • Buffered Inputs The Harris CD54HC04, CD54HCT04, CD74HC04 and CD74HCT04 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with
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CD54HC04,
CD54HCT04,
CD74HC04,
CD74HCT04
CD74HC04
CD74HCT04
74HCT
1-800-4-HARRIS
74LS
CD54HC04
CD54HCT04
CD74HC04E
CD74HC04M
CD74HCT04E
CD74HCT04M
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MAX828
Abstract: TB379 ICL828 ICL828IH-T
Text: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two
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ICL828
ICL828
12kHz
OT23-5
MAX828
TB379
ICL828IH-T
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ICL828
Abstract: ICL828IH-T MAX828 TB379
Text: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two
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ICL828
ICL828
12kHz
OT23-5
ICL828IH-T
MAX828
TB379
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HCS05D
Abstract: HCS05DMSR HCS05HMSR HCS05K HCS05KMSR HCS05MS
Text: HCS05MS Radiation Hardened Hex Inverter with Open Drain September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)
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HCS05MS
MIL-STD-1835
CDIP2-T14,
-55oC
125oC
05A/cm2
HCS05D
HCS05DMSR
HCS05HMSR
HCS05K
HCS05KMSR
HCS05MS
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HCS04D
Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
Text: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCS04MS
MIL-STD-1835
CDIP2-T14
-55oC
125oC
05A/cm2
HCS04D
HCS04DMSR
HCS04HMSR
HCS04K
HCS04KMSR
HCS04MS
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IRLM6302
Abstract: HFA3925 AM79C930 AN9812 ICL7660 MMBT2222 MMBT2907 QA transistor PCMCIA Design
Text: Elimination of Transient Start-Up Logic State in PRISM 2.4GHz Direct Sequence Reference Radio Application Note July 1998 AN9812 Author: Richard L. Abrahams Introduction This Application Note describes circuitry to eliminate a transient start-up logic state in the AMD AM79C930
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AN9812
AM79C930
HFA3925
AM79C930
125ms
IRLM6302
AN9812
ICL7660
MMBT2222
MMBT2907
QA transistor
PCMCIA Design
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HCS04D
Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
Text: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCS04MS
MIL-STD-1835
CDIP2-T14
-55oC
125oC
05A/cm2
HCS04D
HCS04DMSR
HCS04HMSR
HCS04K
HCS04KMSR
HCS04MS
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HCTS04D
Abstract: HCTS04DMSR HCTS04HMSR HCTS04K HCTS04KMSR HCTS04MS
Text: HCTS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS04MS
MIL-STD-1835
CDIP2-T14
-55oC
125oC
HCTS04D
HCTS04DMSR
HCTS04HMSR
HCTS04K
HCTS04KMSR
HCTS04MS
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