S-80746AL
Abstract: S-80751SL-EF-X dtx 370
Text: Contents Features .1 Pin Assignment .1 Block
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S-805
S-80746AL
S-80751SL-EF-X
dtx 370
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Untitled
Abstract: No abstract text available
Text: Contents Features .1 Pin Assignment .1 Block
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S-805
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a7x transistor
Abstract: TRANSISTOR 318 13003 S80742AL S805 S-80746AL S-805 S-807 Diode A4X S-808 S80727AN
Text: Rev.2.0 * S-807 Series will be summarized into S-808 Series. S-807 Series HIGH-PRECISION VOLTAGE DETECTOR The S-807 Series is an adjustment-free high-precision voltage detector made using the CMOS process. The output voltage is fixed internally, with an accuracy of ±2.4%. Two output types are available, Nch opendrain and CMOS output active “H” and “L” , both of which have various
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S-807
S-808
S-805
S-807XXSX
OT-23-5
S807XXSX
a7x transistor
TRANSISTOR 318 13003
S80742AL
S805
S-80746AL
Diode A4X
S80727AN
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S-807 Series
Abstract: replacement transistor 13003 S-80746AL S-805 S-807 S-80716AN S-808 dtx 370 S-80722 S807XX
Text: Contents Features .1 Pin Assignment .1 Block
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S-805
S-807 Series
replacement transistor 13003
S-80746AL
S-807
S-80716AN
S-808
dtx 370
S-80722
S807XX
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S-80746AL
Abstract: S-805 S-807 S-80716AN S-808 transistor 3904 TO-92
Text: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2
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S-805
S-807
S-807xxAN
S-807xxAN
S-807
11S807001
S-80746AL
S-80716AN
S-808
transistor 3904 TO-92
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replacement transistor 13003
Abstract: S-805 S-807 S-80716AN S-808 S-80745 S807XX S-80740AH-B4-X 80747 S-80730
Text: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2
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S-805
S-807
replacement transistor 13003
S-80716AN
S-808
S-80745
S807XX
S-80740AH-B4-X
80747
S-80730
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BSC014N04LSI
Abstract: BSC014N04
Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS
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BSC014N04LSI
IEC61249-2-21
014N04LI
BSC014N04LSI
BSC014N04
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BSC014N04LSI
Abstract: bsc014n04 BSC014N04LS
Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS
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BSC014N04LSI
IEC61249-2-21
014N04LI
BSC014N04LSI
bsc014n04
BSC014N04LS
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Untitled
Abstract: No abstract text available
Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS
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BSC010N04LSI
IEC61249-2-21
010N04LI
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Untitled
Abstract: No abstract text available
Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1
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BSN011NE2LSI
IEC61249-2-21
011NE2I
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DIODE DS12
Abstract: No abstract text available
Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1
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BSN011NE2LSI
IEC61249-2-21
011NE2I
DIODE DS12
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0901NSI
Abstract: BSC0901NSI IEC61249-2-21
Text: BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max
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BSC0901NSI
IEC61249-2-21
0901NSI
0901NSI
BSC0901NSI
IEC61249-2-21
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PDF
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Untitled
Abstract: No abstract text available
Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1
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BSN011NE2LSI
IEC61249-2-21
011NE2I
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PDF
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Untitled
Abstract: No abstract text available
Text: BSC0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max
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BSC0902NSI
IEC61249-2-21
0902NSI
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Untitled
Abstract: No abstract text available
Text: BSZ0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max
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BSZ0902NSI
IEC61249-2-21
0902NSI
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Untitled
Abstract: No abstract text available
Text: BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max
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BSC0901NSI
IEC61249-2-21
0901NSI
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PDF
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Untitled
Abstract: No abstract text available
Text: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1
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BSN011NE2LSI
IEC61249-2-21
011NE2I
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018NE2LI
Abstract: No abstract text available
Text: BSC018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8
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BSC018NE2LSI
IEC61249-2-21
018NE2LI
018NE2LI
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Untitled
Abstract: No abstract text available
Text: BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max
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BSZ0901NSI
IEC61249-2-21
0901NSI
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PDF
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Untitled
Abstract: No abstract text available
Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS
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BSC014N04LSI
IEC61249-2-21
014N04LI
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PDF
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BSC010N04LSI
Abstract: No abstract text available
Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS
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Original
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BSC010N04LSI
IEC61249-2-21
010N04LI
BSC010N04LSI
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PDF
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Untitled
Abstract: No abstract text available
Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS
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Original
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BSC014N04LSI
IEC61249-2-21
014N04LI
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PDF
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Untitled
Abstract: No abstract text available
Text: BSZ018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8
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BSZ018NE2LSI
IEC61249-2-21
018NE2I
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YG802C09
Abstract: YG802N09 A448 yg802c
Text: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m olding. • teV F Low VF • T .A 'V + V 'f C o n n e c tio n D ia g ra m Super high speed switching. • f a it Y G 802C 09 High reliability by planer design.’ {¿)Q PI 1
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OCR Scan
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YG802C
SC-67
YG802C09
YG802N09
500ns,
YG802C09
YG802N09
A448
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