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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package


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    PDF ENA1126A FH105A FH105A 2SC5245A, A1126-8/8

    FH105A

    Abstract: AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor
    Text: FH105A Ordering number : ENA1126 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency


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    PDF FH105A ENA1126 FH105A 2SC5245A, A1126-6/6 AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor

    transistor 8026

    Abstract: 2SC5245 FH105
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


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    PDF ENN6219 FH105 FH105] FH105 2SC5245, transistor 8026 2SC5245

    FH105A

    Abstract: A1126 2SC5245A a11266 a1126-1
    Text: FH105A 注文コード No. N A 1 1 2 6 三洋半導体データシート N FH105A NPN エピタキシァルプレーナ型シリコン複合トランジスタ 高周波低雑音増幅差動増幅用 特長 ・従来の MCP 外形にトランジスタを 2 素子内蔵した複合タイプであり、実装基板効率が大幅にアップできる。


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    PDF FH105A FH105A 2SC5245A 250mm2 S21e2 A1126-5/6 A1126-6/6 A1126 2SC5245A a11266 a1126-1

    2SJ275

    Abstract: ITR00318 ITR00319 ITR00320 ITR00321 ITR00322
    Text: 注文コード No.N 4 2 4 0 2SJ275 No. 4 2 4 0 三洋半導体ニューズ 61499 新 2SJ275 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


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    PDF 2SJ275 IT00324 IT00325 ITR00322 IT00326 IT00327 2SJ275 ITR00318 ITR00319 ITR00320 ITR00321 ITR00322

    2SC5245

    Abstract: FH105 IT00323 transistor 8026
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original
    PDF ENN6219 FH105 FH105] FH105 2SC5245, 2SC5245 IT00323 transistor 8026