2SC5551
Abstract: TA-2665
Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).
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ENN6328
2SC5551
300mA)
2SC5551]
25max
2SC5551
TA-2665
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2SC5551
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
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2SC5551A
ENA1118
300mA)
250mm20
A1118-4/4
2SC5551
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1118A
2SC5551A
300mA,
300mA)
250mm2
A1118-6/6
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A11182
Abstract: 2sc5551a A1118-4/4
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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ENA1118A
2SC5551A
300mA)
250mm2
A1118-6/6
A11182
2sc5551a
A1118-4/4
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Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).
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ENA1118
2SC5551A
300mA)
250mm20
A1118-4/4
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2SC5551
Abstract: 2038
Text: 注文コード No. N 6 3 2 8 2SC5551 No. N 6 3 2 8 N1299 新 2SC5551 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波中出力増幅用 ・高 fT である： fT=3.5GHz typ 。 ・大電流である：(IC=300mA)。 ・コレクタ損失が大きい：(1.3W max)。
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2SC5551
N1299
300mA)
250mm2
300mA
2SC5551
2038
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Untitled
Abstract: No abstract text available
Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)
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PDF
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2SC5551A
ENA1118A
300mA)
250mm2Ã
A1118-6/6
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2SC5551
Abstract: TA-2665 marking eb
Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).
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PDF
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ENN6328
2SC5551
300mA)
2SC5551]
25max
2SC5551
TA-2665
marking eb
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A1118
Abstract: 7007B-004 2sc5551a 7400A
Text: 2SC5551A 注文コード No. N A 1 1 1 8 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5551A 高周波中出力増幅用 特長 ・高 fT である： fT=3.5GHz typ 。 ・大電流である： (IC=300mA)。
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2SC5551A
300mA)
250mm2
300mA
2SC5551A
IT01071
600mA
250mm2
A1118
7007B-004
7400A
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