3LP03M
Abstract: TYP300V
Text: 3LP03M 注文コード No. N 8 1 5 4 3LP03M P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。 ・高静電耐量 TYP300V [ゲート・ソース間保護用片側 Di 内蔵]。
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3LP03M
TYP300V)
120mA
120mA,
IT07659
--10V
--15V
IT08164
IT08166
3LP03M
TYP300V
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3LP03SS
Abstract: No abstract text available
Text: 3LP03SS Ordering number : EN8649 P-Channel Silicon MOSFET 3LP03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD TYP 300V [with a protection diode connected between the gate and source].
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3LP03SS
EN8649
3LP03SS
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3LP03S
Abstract: A00104
Text: 3LP03S Ordering number : ENA0010 P-Channel Silicon MOSFET 3LP03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03S
ENA0010
A0010-4/4
3LP03S
A00104
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Untitled
Abstract: No abstract text available
Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03M
ENN8154
3LP03M/D
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marking XG
Abstract: sw 8154 if 3LP03M
Text: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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3LP03M
ENN8154
marking XG
sw 8154 if
3LP03M
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EC4304C
Abstract: No abstract text available
Text: EC4304C Ordering number : ENN8124 P-Channel Silicon MOSFET EC4304C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].
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EC4304C
ENN8124
EC4304C
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