Untitled
Abstract: No abstract text available
Text: SS0503SH Ordering number : EN8067A SANYO Semiconductors DATA SHEET SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)
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EN8067A
SS0503SH
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A1006
Abstract: d1207
Text: SCH2825 注文コード No. N A 1 0 0 6 三洋半導体データシート N SCH2825 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタとショットキバリアダイオ−ドを 1 パッケージに内蔵した複合タイプ
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SCH2825
900mm2
D1207PE
TC-00001031
A1006-1/6
IT08187
IT07891
ID00338
A1006
d1207
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SS0503SH
Abstract: No abstract text available
Text: SS0503SH 注文コード No. N 8 0 6 7 三洋半導体データシート N SS0503SH ショットキバリアダイオード 30V, 0.5A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SS0503SH
100mA,
62797GI
TB-00000213
21505SB
BX-0698
IT07927
IT08187
SS0503SH
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Untitled
Abstract: No abstract text available
Text: SCH2825 Ordering number : ENA1006A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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SCH2825
ENA1006A
A1006-7/7
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Untitled
Abstract: No abstract text available
Text: MCH5835 Ordering number : ENA0655 SANYO Semiconductors DATA SHEET MCH5835 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3443 and a schottky barrier diode (SS0503SH)
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ENA0655
MCH5835
MCH3443)
SS0503SH)
A0655-6/6
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77191
Abstract: SS05015SH
Text: SS05015SH 注文コード No. N 7 7 1 9 A 三洋半導体データシート 半導体ニューズ No.N7719 とさしかえてください。 SS05015SH ショットキバリアダイオード 15V, 0.5A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SS05015SH
N7719
100mA,
900mm2
62797GI
TB-00001125
IT07927
IT08178
IT06807
77191
SS05015SH
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Untitled
Abstract: No abstract text available
Text: SS0503SH Ordering number : EN8067A SANYO Semiconductors DATA SHEET SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)
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SS0503SH
EN8067A
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SS0503SH
Abstract: No abstract text available
Text: SS0503SH Ordering number : ENN8067 SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V).
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SS0503SH
ENN8067
SS0503SH
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SS05015SH
Abstract: marking SA
Text: SS05015SH Ordering number : ENN7719 SS05015SH Schottky Barrier Diode 15V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.45V).
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SS05015SH
ENN7719
SS05015SH
marking SA
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Untitled
Abstract: No abstract text available
Text: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)
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SCH2819
ENN8291
SCH1419)
SS0503)
SCH2819/D
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SCH2819
Abstract: SCH1419 8-2914
Text: SCH2819 注文コード No. N 8 2 9 1 三洋半導体データシート N SCH2819 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ（SCH1419）
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SCH2819
SCH1419
SS0503
900mm2
62005PE
TB-00001351
IT07928
IT08187
SCH2819
SCH1419
8-2914
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82306
Abstract: SCH2811
Text: SCH2811 Ordering number : ENA0440 SANYO Semiconductors DATA SHEET SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
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SCH2811
ENA0440
A0440-6/6
82306
SCH2811
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MCH3435
Abstract: MCH5834 SS0503SH IT1180
Text: MCH5834 注文コード No. N A 0 5 5 8 三洋半導体データシート N MCH5834 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ MCH3435 とショットキバリアダイオード(SS0503SH)を 1 パッケージに
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MCH5834
MCH3435)
SS0503SH)
900mm2
N0806PE
TC-0000259
A0558-1/6
IT11802
MCH3435
MCH5834
SS0503SH
IT1180
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Untitled
Abstract: No abstract text available
Text: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
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ENA0440
SCH2811
A0440-6/6
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SCH1412
Abstract: SCH2808
Text: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)
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SCH2808
ENN8360
SCH1412)
SS0503)
SCH1412
SCH2808
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SS05015SH
Abstract: No abstract text available
Text: SS05015SH Ordering number : ENN7719A SS05015SH Schottky Barrier Diode 15V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.45V).
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SS05015SH
ENN7719A
SS05015SH
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MCH5835
Abstract: MCH3443 SS0503SH
Text: MCH5835 注文コード No. N A 0 6 5 5 A 三洋半導体データシート 半導体デ−タシート No.NA0655 をさしかえてください。 MCH5835 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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MCH5835
NA0655
MCH3443)
SS0503SH)
900mm2
O3107
20707PE
TC-00000517
A0655-1/6
MCH5835
MCH3443
SS0503SH
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SCH2822
Abstract: No abstract text available
Text: SCH2822 注文コード No. N A 0 6 6 8 三洋半導体データシート N SCH2822 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタとショットキバリアダイオードを 1 パッケージに内蔵した
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SCH2822
900mm2
22807PE
TC-00000508
A0668-1/6
IT07927
IT08178
IT06807
SCH2822
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a1006
Abstract: No abstract text available
Text: SCH2825 Ordering number : ENA1006 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package
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ENA1006
SCH2825
A1006-6/6
a1006
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Untitled
Abstract: No abstract text available
Text: SCH2825 Ordering number : ENA1006A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
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SCH2825
ENA1006A
A1006-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8067A SS0503SH Schottky Barrier Diode http://onsemi.com 30V, 0.5A, Low VF, Single SCH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)
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EN8067A
SS0503SH
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MCH5835
Abstract: MCH3443 SS0503SH
Text: MCH5835 Ordering number : ENA0655A SANYO Semiconductors DATA SHEET MCH5835 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3443 and a schottky barrier diode (SS0503SH)
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MCH5835
ENA0655A
MCH3443)
SS0503SH)
A0655-6/6
MCH5835
MCH3443
SS0503SH
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Untitled
Abstract: No abstract text available
Text: SS0503SH Ordering number : ENN8067 SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V).
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ENN8067
SS0503SH
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marking xa
Abstract: No abstract text available
Text: SCH2825 Ordering number : ENA1006 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package
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SCH2825
ENA1006
A1006-6/6
marking xa
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