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    IT08735 Search Results

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    2SJ666

    Abstract: IT08805
    Text: 2SJ666 Ordering number : EN8591 P-Channel Silicon MOSFET 2SJ666 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ666 EN8591 2SJ666 IT08805 PDF

    2SJ664

    Abstract: No abstract text available
    Text: 2SJ664 Ordering number : EN8589 P-Channel Silicon MOSFET 2SJ664 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ664 EN8589 2SJ664 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


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    EN8586A 2SJ661 O-262-3L/TO-263-2L 4360pF PDF

    2SJ665

    Abstract: No abstract text available
    Text: 2SJ665 Ordering number : EN8590 P-Channel Silicon MOSFET 2SJ665 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ665 EN8590 2SJ665 PDF

    2SJ663

    Abstract: IT08775
    Text: 2SJ663 Ordering number : EN8588 P-Channel Silicon MOSFET 2SJ663 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ663 EN8588 2SJ663 IT08775 PDF

    2SJ661

    Abstract: No abstract text available
    Text: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ661 EN8586 2SJ661 PDF

    2SJ661

    Abstract: D100003
    Text: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


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    2SJ661 IT08757 IT08756 --38A --152A IT08735 IT08758 2SJ661 D100003 PDF

    2SJ660

    Abstract: J660
    Text: 2SJ660 注文コード No. N 8 5 8 5 三洋半導体データシート N 2SJ660 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


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    2SJ660 --26A IT08746 IT08745 IT08735 IT08747 2SJ660 J660 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications


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    2SJ661 EN8586A 4360pF PDF

    2SJ659

    Abstract: No abstract text available
    Text: 2SJ659 Ordering number : EN8584A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ659 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.


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    2SJ659 EN8584A 2SJ659 PDF

    2SJ660

    Abstract: No abstract text available
    Text: 2SJ660 Ordering number : EN8585 P-Channel Silicon MOSFET 2SJ660 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ660 EN8585 2SJ660 PDF

    2SJ662

    Abstract: IT08765
    Text: 2SJ662 Ordering number : EN8587 P-Channel Silicon MOSFET 2SJ662 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ662 EN8587 2SJ662 IT08765 PDF

    2SJ659

    Abstract: J659 IT08728
    Text: 2SJ659 注文コード No. N 8 5 8 4 A 三洋半導体データシート 半導体データシート No.N8584 をさしかえてください。 2SJ659 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


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    2SJ659 N8584 --14A IT08733 IT08734 IT08735 IT08736 2SJ659 J659 IT08728 PDF

    J659

    Abstract: No abstract text available
    Text: 2SJ659 Ordering number : EN8584 P-Channel Silicon MOSFET 2SJ659 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    EN8584 2SJ659 J659 PDF