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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    EN8586A 2SJ661 O-262-3L/TO-263-2L 4360pF PDF

    2SJ661

    Abstract: No abstract text available
    Text: 2SJ661 Ordering number : EN8586 P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.


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    2SJ661 EN8586 2SJ661 PDF

    2SJ661

    Abstract: D100003
    Text: 2SJ661 注文コード No. N 8 5 8 6 三洋半導体データシート N 2SJ661 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original
    2SJ661 IT08757 IT08756 --38A --152A IT08735 IT08758 2SJ661 D100003 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ661 Ordering number : EN8586A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ661 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=29.5mΩ(typ.) 4V drive • Input capacitance Ciss=4360pF (typ.) Specifications


    Original
    2SJ661 EN8586A 4360pF PDF