MCH6629
Abstract: D1306 TYP300V
Text: MCH6629 注文コード No. N 8 2 3 9 A 三洋半導体データシート 半導体ニューズ No.N8239 をさしかえてください。 MCH6629 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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MCH6629
N8239
TYP300V)
900mm2
IT08166
IT09251
IT09252
IT09253
MCH6629
D1306
TYP300V
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MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
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MCH6629
EN8239A
MCH6629
8239
D1306
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MCH6629
Abstract: 8239 D1306
Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V
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MCH6629
EN8239A
MCH6629
8239
D1306
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8239
Abstract: MCH6629
Text: MCH6629 Ordering number : ENN8239 P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].
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MCH6629
ENN8239
8239
MCH6629
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