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Catalog Datasheet	MFG & Type	PDF	Document Tags
2SJ630 Abstract: A048 Text: 2SJ630 注文コード No. N A 0 4 8 9 三洋半導体データシート N 2SJ630 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・低オン抵抗。・超高速スイッチング。・1.8V 駆動。	Original	PDF	2SJ630 600mm2 IT11397 IT11398 A0489-3/4 IT11399 IT11400 2SJ630 A048
2SJ630 Abstract: marking MD Text: 2SJ630 Ordering number : ENA0489 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C	Original	PDF	2SJ630 ENA0489 600mm2 A0489-4/4 2SJ630 marking MD

Catalog Datasheet

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2SJ630

Abstract: A048
Text: 2SJ630 注文コード No. N A 0 4 8 9 三洋半導体データシート N 2SJ630 P チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス特長・低オン抵抗。・超高速スイッチング。・1.8V 駆動。

Original

PDF

2SJ630 600mm2 IT11397 IT11398 A0489-3/4 IT11399 IT11400 2SJ630 A048

2SJ630

Abstract: marking MD
Text: 2SJ630 Ordering number : ENA0489 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Original

PDF

2SJ630 ENA0489 600mm2 A0489-4/4 2SJ630 marking MD